Radiation spectrum of a glow discharge in chlorine

Efremov, A. M.; Kupriyanovskaya, A. P.; Svettsov, V. I.

doi:10.1007/bf00661790

Cited by 6 publications

(3 citation statements)

References 9 publications

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“…Here, T e drops by nearly 50% as pressure is increased from 0.5 to 5.0 mTorr with the biggest drop occurring between 2.0 and 5.0 mTorr. 5,21,22 Indeed there is a more pronounced effect on T e ͑decrease with increasing Cl 2 flow fraction͒ than at Zϭ10 cm, as well as V p ͑decreases with Cl 2 addition͒. The peak density occurs at 2.0 mTorr where T e remains relatively high.…”

Section: Discussionmentioning

confidence: 95%

Characterization of Cl2/Ar high density plasmas for semiconductor etching

Eddy

Leonhardt

Douglass

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Chlorine-based high density plasmas, commonly used in the etching of elemental and compound semiconductors, are characterized using mass spectrometry, optical emission spectroscopy, and electrostatic probes. Plasma fluxes are characterized by three-dimensional Langmuir probe measurements and optical emission spectroscopy. The flux is further characterized at the substrate platen by mass spectrometry to determine its makeup in terms of charged or neutral species and atomic or molecular species. Langmuir probe investigations show variations in electron temperature (2–6 eV), plasma density (1×1010 to 1×1012 cm−3), and plasma potential (5–25 V) as process conditions (microwave power, total pressure, and fraction of Cl2 in Ar) and measurement location are varied. Concurrent optical emission spectroscopy measurements of ionized species are in general agreement with Langmuir probe results. Further, optical emission spectroscopy of neutral and ionized species provides global insight into the variation of atomic/molecular fractions in the plasma as it is transported to the substrate processing region. At the substrate, mass spectrometric characterizations show Cl+ and Ar+ dominating the flux for low pressure and high powers, while Cl2 and Ar dominate at high pressure and low power. For Cl2 fractions greater than 25% molecular chlorine begins to dominate the flux to the substrate. These observations of processing space are discussed with respect to implications on semiconductor etching and regions most suitable to high rate, anisotropic processing conditions are identified.

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Section: Discussionmentioning

confidence: 95%

Characterization of Cl2/Ar high density plasmas for semiconductor etching

Eddy

Leonhardt

Douglass

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The most intense atomic lines free of overlap in all of the systems are Cl 725.67 nm (4p 4 S 0 → 4s 4 P, ε th = 10.6 eV) and H 656.37 nm (3d 2 D → → 2p 2 P 0 , ε th = 12.09 eV). It is known that the both upper states are populated pre dominantly by electron impact in a low temperature plasma, with short lifetimes of the excited species allowing their nonradiative deactivation processes to be neglected [13,14]. Therefore, these lines are often used for the actinometric determination of concentra tion of chlorine and hydrogen atoms in various electri cal discharges [1,11,14].…”

Section: Resultsmentioning

confidence: 99%

Kinetics of heterogeneous decay of chlorine and hydrogen atoms in plasmas of HCl binary mixtures with Ar, H2, O2, and Cl2

Efremov

Murin

2015

High Energy Chem

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The heterogeneous decay kinetics of chlorine and hydrogen atoms in plasmas of HCl mixtures with Ar, H 2 , O 2 , and Cl 2 of variable initial composition have been studied using optical and spectral diagnos tics methods and plasma simulation. It has been shown that the assumption about the constant recombina tion probability is inconsistent with the behavior of calculated concentrations of atoms depending on their reduced emission intensity. Mechanisms for the effect of the initial composition of the mixtures on the recombination probability have been proposed.

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“…The concentration of C l 2 molecules in the ground state ( ) was measured by the method of absorption spectroscopy [9] (MUM-1 monochromator, λ = 200-800 nm); radiation sources were provided by a copper ball lamp ( λ Cu = 324.7 nm), a DRT-230 mercury lamp ( λ Hg = 365 nm, 313.2 nm), and an LSP-1 silver-based hollow-cathode lamp ( λ Ag = 328 nm). The choice of sources is defined by the closeness of working wavelengths to the maximum of photoabsorption of Cl 2 molecules (330 nm [10]) and by the intensity and stability of radiation, as well as by the fact that the radiation of the discharge proper on these wavelengths is minimal [11]. The calculations of the concentration of chlorine atoms in plasma ( n Cl ) were performed by the equation of material balance for Cl 2 molecules assuming the constant pressure in the reactor upon ignition of discharge = ( + 0.5 n Cl )/( T / T 0 ) , where and T 0 denote the concentration of chlorine molecules and the gas temperature prior to ignition of the discharge.…”

Section: Experimental Setup and Plasma Diagnosticsmentioning

confidence: 99%

The parameters of plasma and the kinetics of generation and loss of active particles under conditions of discharge in chlorine

2008

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The parameters of plasma and the kinetics of generation and loss of active particles are investigated under conditions of a dc glow discharge in chlorine ( P = 40-280 Pa, i p = 5-15 mA). It is found that the generation of atoms in chlorine plasma is supported by the dissociation of Cl 2 molecules under electron impact, and the contribution by dissociative attachment does not exceed 10%. Calculation data are obtained on the mass composition of neutral and charged particles of plasma. It is demonstrated that the assumption of the first kinetic order of heterogeneous loss of atoms provides for adequate agreement of the experimentally obtained and calculated values of E / N, of the concentration of chlorine atoms, and of the density of positive ion flux to the surface of discharge tube.

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Radiation spectrum of a glow discharge in chlorine

Cited by 6 publications

References 9 publications

Characterization of Cl2/Ar high density plasmas for semiconductor etching

Characterization of Cl2/Ar high density plasmas for semiconductor etching

Kinetics of heterogeneous decay of chlorine and hydrogen atoms in plasmas of HCl binary mixtures with Ar, H2, O2, and Cl2

The parameters of plasma and the kinetics of generation and loss of active particles under conditions of discharge in chlorine

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