Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells J. Vac. Sci. Technol. B 31, 03C119 (2013); 10.1116/1.4797486 Fluorescence quantum efficiency of CdSe/ZnS quantum dots embedded in biofluids: pH dependence ZnO based quantum dot sensitized solar cell using CdS quantum dots J. Renewable Sustainable Energy 4, 013110 (2012); 10.1063/1.3683531 Effect of ZnS coating on the photovoltaic properties of CdSe quantum dot-sensitized solar cellsMultijunction solar cells (MJSCs) with a quantum dot (QD) spectrum converter have been proposed and studied to boost the device performance. Our QD spectrum converter consisted of a thin double side-polished sapphire substrate coated with a blue-emitting (k PL ¼ 480 nm) CdSe/ZnS core/shell QD layer. To evaluate the effect of emission/re-absorption, the thickness of QD layer was modulated by adjusting the concentration of QD-toluene solution in spin-coat process. The quantum yield of the QD-toluene solution was about 88%. Considering the influence of QD concentration on the absorption/re-emission of incident light, the MJSCs could have better performance with the QD spectrum converter attached. With a 15-nm-thick QD spectrum converter attached, the short-circuit current density and power conversion efficiency of the MJSC were improved from 10.69 to 11.22 mA/cm 2 and from 22.29 to 23.41%, respectively. The possible reasons for the limited improvement were also proposed.