Impact of CdSe/ZnS quantum dot spectrum converters on InGaP/GaAs/Ge multi-junction solar cells

Huang, Chun-Yuan

doi:10.1116/1.3673784

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

2011

DOI: 10.1116/1.3673784

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Impact of CdSe/ZnS quantum dot spectrum converters on InGaP/GaAs/Ge multi-junction solar cells

Chun-Yuan Huang

Abstract: Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells J. Vac. Sci. Technol. B 31, 03C119 (2013); 10.1116/1.4797486 Fluorescence quantum efficiency of CdSe/ZnS quantum dots embedded in biofluids: pH dependence ZnO based quantum dot sensitized solar cell using CdS quantum dots J. Renewable Sustainable Energy 4, 013110 (2012); 10.1063/1.3683531 Effect of ZnS coating on the photovoltaic properties of CdSe quantum dot-sensitized solar c… Show more

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Cited by 5 publications

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On the Principles of Tweaking Nanostructure Fabrication via Focused Electron Beam Induced Processing Combined with Catalytic Growth Processes

Drost

Vollnhals

et al. 2017

Small Methods

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Novel pathways to use a focused electron beam in ultrahigh vacuum in combination with catalytic growth protocols are explored for the fabrication of well-defined nanostructures. Thereby, the basic process is the local deposition of material from different precursor molecules (Co(CO) 3 NO, Fe(CO) 5 ). This can be realized with a focused electron beam by direct deposition of the precursor or by a chemical modification of the substrate, such that it becomes activated toward the decomposition of the precursor. For both methods, autocatalytic growth (AG) processes can occur, yielding the deposition of additional material. Interestingly, significantly different chemical selectivities for the two precursors are found, which can drastically change upon subtle changes of the surface. It is demonstrated that AG can be tweaked by the choice of the substrate/precursor combination. One possibility to quench catalytic activity of a substrate is the preparation of a thin layer of organic molecules, here porphyrins, which enables the fabrication of hybrid metal-organic nanostructures with line widths below 20 nm. Based on these findings, corresponding techniques are developed which exploit (auto)catalytic effects for the controlled fabrication of nanostructures. These results indicate that every substrate is applicable to electron beam induced surface activation by preparation of a thin porphyrin layer.

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On the Principles of Tweaking Nanostructure Fabrication via Focused Electron Beam Induced Processing Combined with Catalytic Growth Processes

Drost

Vollnhals

et al. 2017

Small Methods

View full text Add to dashboard Cite

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Selective Growth of Titanium Dioxide by Low-Temperature Chemical Vapor Deposition

Reinke

Kuzminykh

Hoffmann

2015

ACS Appl. Mater. Interfaces

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A key factor in engineering integrated optical devices such as electro-optic switches or waveguides is the patterning of thin films into specific geometries. In particular for functional oxides, etching processes are usually developed to a much lower extent than for silicon or silicon dioxide; therefore, selective area deposition techniques are of high interest for these materials. We report the selective area deposition of titanium dioxide using titanium isopropoxide and water in a high-vacuum chemical vapor deposition (HV-CVD) process at a substrate temperature of 225 °C. Here—contrary to conventional thermal CVD processes—only hydrolysis of the precursor on the surface drives the film growth as the thermal energy is not sufficient to thermally decompose the precursor. Local modification of the substrate surface energy by perfluoroalkylsilanization leads to a reduced surface residence time of the precursors and, consequently, to lower reaction rate and a prolonged incubation period before nucleation occurs, hence, enabling selective area growth. We discuss the dependence of the incubation time and the selectivity of the deposition process on the presence of the perfluoroalkylsilanization layer and on the precursor impinging rates—with selectivity, we refer to the difference of desired material deposition, before nucleation occurs in the undesired regions. The highest measured selectivity reached (99 ± 5) nm, a factor of 3 superior than previously reported in an atomic layer deposition process using the same chemistry. Furthermore, resolution of the obtained patterns will be discussed and illustrated.

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Area-Selective ALD of TiO₂ Nanolines with Electron-Beam Lithography

et al. 2014

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We demonstrate a bottom-up approach to fabricate nanoline structures using self-assembled monolayer (SAM) modified substrates to selectively prevent nucleation during atomic layer deposition (ALD). Low-energy (≤5 kV) electron-beam lithography (EBL) was used to modify the hydrophobic functional groups (−CH 3 ) of octadecyltrichlorosilane (OTS) SAM to hydrophilic species (e.g., −COOH), which allows chemisorption of the titanium isopropoxide (TTIP) and water to initiate titanium oxide (TiO 2 ) nucleation. TiO 2 thin films were selectively deposited on the OTS molecules which were properly functionalized or patterned. We systematically investigate the effects of e-beam dose and accelerating voltage on selective TiO 2 deposition with nanoline patterns. The results indicate that the former parameter determines the resolution of individual line width, while the latter one is attributed to the minimum pitch dimension of dense line patterns achievable. Using the optimal e-beam parameters, i.e., accelerating voltages of 1−2 kV and a line dose of 10 nC/cm, TiO 2 nanolines with a maximum resolution of 30 nm and a minimum pitch of 50 nm were achieved. This study offers a new approach to fabricate closepacked nanopatterns for IC devices without any challenging etching processes.

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Impact of CdSe/ZnS quantum dot spectrum converters on InGaP/GaAs/Ge multi-junction solar cells

Cited by 5 publications

References 20 publications

On the Principles of Tweaking Nanostructure Fabrication via Focused Electron Beam Induced Processing Combined with Catalytic Growth Processes

On the Principles of Tweaking Nanostructure Fabrication via Focused Electron Beam Induced Processing Combined with Catalytic Growth Processes

Selective Growth of Titanium Dioxide by Low-Temperature Chemical Vapor Deposition

Area-Selective ALD of TiO₂ Nanolines with Electron-Beam Lithography

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Impact of CdSe/ZnS quantum dot spectrum converters on InGaP/GaAs/Ge multi-junction solar cells

Cited by 5 publications

References 20 publications

On the Principles of Tweaking Nanostructure Fabrication via Focused Electron Beam Induced Processing Combined with Catalytic Growth Processes

On the Principles of Tweaking Nanostructure Fabrication via Focused Electron Beam Induced Processing Combined with Catalytic Growth Processes

Selective Growth of Titanium Dioxide by Low-Temperature Chemical Vapor Deposition

Area-Selective ALD of TiO2 Nanolines with Electron-Beam Lithography

Contact Info

Product

Resources

About

Area-Selective ALD of TiO₂ Nanolines with Electron-Beam Lithography