Radiation-induced bistable centers with deep levels in silicon n +–p structures

Ластовский, С. Б.; Маркевич, В. П.; Yakushevich, H. S.; Мурин, Л. И.; Krylov, Vladimir

doi:10.1134/s1063782616060130

Cited by 11 publications

(30 citation statements)

References 16 publications

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“…The observation and characterization of these traps have been reported by us recently in Ref. . It was found that the E v +0.45 eV and E v +0.54 eV traps are related to two energy levels of a bistable defect.…”

Section: Resultsmentioning

confidence: 99%

“…We have not detected any energy levels related to this configuration in the irradiated Si diodes with p‐type base. However, an injection of minority carriers (electrons) upon the application of a forward voltage to the irradiated n + ‐p junctions resulted in transformation of the defect to a configuration which has two energy levels at E v +0.45 eV and E v +0.54 eV . The reverse transition to the lowest energy configuration occurs in the temperature range 50–100 °C, and is characterized by the activation energy of 1.25 eV and a frequency factor of 5 × 10 15 s −1 .…”

Section: Resultsmentioning

confidence: 99%

“…It was suggested in Ref. that the bistable defect could be due to a complex of a self‐interstitial silicon atom with an interstitial carbon (C i I) or a complex consisting of I and an interstitial boron atom (B i I). Similar to the case of the I 2 O defect, there are two pathways for the formation and dissociation of the C i I and B i I defects: i) I 2 + C s (B s ) ⇔ C i I(B i I) and ii) C i (B i ) + I ⇔ C i I(B i I).…”

Section: Resultsmentioning

confidence: 99%

“…However, until recently neither experimental nor theoretical modeling results on such interactions and possible resulting defects have been published. It has been argued in a recent paper that a radiation‐induced defect, which gives rise to two DLTS signals related to hole emission from energy levels at E v +0.54 eV and E v +0.45 eV, could be associated with a complex resulting from interactions of mobile I 2 s with either C s or B s atoms.…”

Section: Introductionmentioning

confidence: 99%

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The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Gusakov

Ластовский

Мурин

et al. 2017

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.New experimental and theoretical results on the silicon diinterstitial (I 2 ) and its interactions with oxygen and carbon impurity atoms in Si crystals are reported. Electronic structure calculations indicate that I 2 has an acceptor and a donor level in the gap, which are close to the conduction and the valence band edges, respectively. Experimental results, which support the theoretically predicted high mobility of I 2 , are discussed. It is argued that mobile I 2 can be trapped by oxygen and carbon impurities. The I 2 O center has a donor level at E v þ0.09 eV. Two absorption bands at 936 and 929 cm À1 are assigned to the local vibrational modes of the I 2 O defect in the neutral and positively charged states, respectively. The binding energy of I 2 O relative to the separated I 2 and O i species is 0.22 eV. The disappearance of the I 2 O complex upon thermal annealing occurs in the temperature range 50-100 8C and is accompanied by the introduction of another defect, which gives rise to two hole emission signals from energy levels at E v þ0.54 and E v þ0.45 eV. It is argued that these levels are related to a complex consisting of interstitial carbon and interstitial silicon atoms (C i I). The stable configurations of the C i I pair have been found.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

Gusakov

Ластовский

Мурин

et al. 2017

Physica Status Solidi (a)

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“…Вместе с тем имеет место некоторое несоответствие между температурами отжига центра E v + 0,09 эВ, наблюдаемых в [9], и температурами появления бистабильного дефекта, приведенных в [10]. В настоящей работе будет показано, что это несоответствие может быть связано с инжекционно-стимулированным отжигом комплекса.…”

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INJECTION ANNEALING OF THE SELF DI-INTERSTITIAL – OXYGEN COMPLEX IN p-TYPE SILICON

Макаренко¹,

Ластовский²,

Gaubas³

et al. 2018

Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

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With the use of deep level transient spectroscopy (DLTS) the effect of injection of minority charge carriers (electrons) on an annealing rate of self di-interstitial – oxygen (I2O) complex in silicon has been studied. The complex has been formed by irradiation of epitaxial boron-doped n+–p diode structures with alpha-particles at room temperature. It has been shown that the disappearance of this complex at room temperature begins at a direct current density of ~1.5 A/cm2. This characteristic current density has been found for 10 W·cm p-type silicon when the total radiation defect density was less than 15 % of the initial boron concentration, a divalent hole trap with energy levels of Ev + 0.43 eV and Ev + 0.54 eV has been found to appear as a result of recombination-enhanced annealing of the I2O. When the I2O complex is annealed thermally, the concurrent appearance of an electron trap with an energy level of Ec – 0.35 eV has been observed. It has been shown that the divalent hole trap represents a metastable configuration (BH-configuration) of the bistable defect, whereas the electron trap is stab le in the p-Si configuration (ME-configuration). From the comparison of DLTS signals related to different defect configurations it is found that the ME-configuration of this bistable defect can be characterized as a center with negative correlation energy. It has been shown that the injection-stimulated processes make it very difficult to obtain reliable data on the formation kinetics of the bistable defect in the BH-configuration when studying the thermal annealing of the I2O complex.

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Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

Makarenko

Lastovski²,

Yakushevich³

et al. 2019

Physica Status Solidi (a)

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The influence of the injection of minority charge carriers on the formation of a divalent bistable defect (DBH) having two energy levels of Ev + 0.44 eV and Ev + 0.53 eV in its metastable configuration is investigated. Using forward current injection, the formation temperature of this defect in p‐type silicon can be lowered by about 50 °C. The production of such bistable defect is enhanced in materials with a high ratio of boron to carbon concentrations. This allows one to conclude that the boron atom is one of the constituents of the defect under study. There is also a correlation between the behavior of the bistable hole traps and a metastable electron trap observed earlier. It is concluded that these traps are related to metastable and stable configurations of the DBH defect, which has inverse occupancy level ordering in its stable configuration.

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Radiation-induced bistable centers with deep levels in silicon n +–p structures

Cited by 11 publications

References 16 publications

The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

INJECTION ANNEALING OF THE SELF DI-INTERSTITIAL – OXYGEN COMPLEX IN p-TYPE SILICON

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

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