Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China

Fan, Yunyun; Alderweireldt, S.; Agapopoulou, C.; Atanov, N.; Ayoub, M. K.; Caforio, D.; Chen, Hongey; Christie, Simon; Costa, J. Barreiro Guimarães da; Cui, H.; D’amen, G.; Davydov, Yu. I.; Kiuchi, R.; Ferreira, André S.; Galloway, Z.; Garau, M.; García, L. Castillo; Ge, Jin; Gee, C. M.; Giacomini, G.; Gkoukousis, V.; Grieco, C.; Guindon, S.; Han, Dejun; Han, Song; Huang, Y.; Jin, Yufeng; Jing, M. Q.; Kuwertz, E. S.; Labitan, C.; Leite, Marina; Li, B.; Liang, Hongwei; Liang, Z.; Liu, B.; Liu, Jia; Lockerby, M.; Lyu, F.; Makovec, N.; Mazza, S. M.; Martinez-McKinney, F.; Nikolić, Irena; Padilla, R.; Qi, Biao; Ran, K.; Ren, Hang; Rizzi, C.; Rossi, Enrico; Sacerdoti, S.; Sadrozinski, H.F.-W.; Saito, G.T.; Schumm, B. A.; Seiden, A.; Shan, Liang; Shi, Liting; Tan, Yuhang; Tricoli, A.; Trincaz-Duvoid, S.; Wilder, M.; Wu, Kewei; Wyatt, William F.; Shi, X.; Yang, Tao; Yang, Yingguo; Yu, Chenxia; Zhang, Xiaoling; Zhao, Li; Zhao, Mei; Zhao, Y.; Zhao, Z.; Zheng, Xiangxuan; Zhuang, X.

doi:10.1016/j.nima.2020.164608

Cited by 17 publications

(10 citation statements)

References 11 publications

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“…The Silicon Low Gain Avalanche Diode (LGAD) has been verified that has better than 50 ps time resolution due to its good S/N between the low gain range (10∼100). And also it has been developed successfully by the various foundries in the past few years [3][4][5][6][7][8][9][10][11]. However, present studies indicate the collected charges of Silicon LGAD decrease rapidly when the irradiation flux up to 2.5×10 15 n eq /cm 2 .…”

Section: Introductionmentioning

confidence: 77%

Simulation of the 4H-SiC Low Gain Avalanche Diode

Yang¹,

Tan²,

Wang³

et al. 2022

Preprint

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Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness d gain = 0.5 µm is adopted in our design. We design two different types of 4H-SiC LGAD which have two types electric field, and the corresponding leakage current, capacitance and gain are simulated by TCAD tools. Through analysis of the simulation results, the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.

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Section: Introductionmentioning

confidence: 77%

Simulation of the 4H-SiC Low Gain Avalanche Diode

Yang¹,

Tan²,

Wang³

et al. 2022

Preprint

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“…Currently, a few research facilities around the world are involved in the development of LGADs, such as Brookhaven National Laboratory (BNL, Upton, NY, USA) [ 7 ], CNM, Fondazione Bruno Kessler (FBK, Trento, Italy) [ 8 ], Hamamatsu (Japan) [ 9 ], IHEP-NDL (Beijng, China) [ 10 ] and Micron (Lancing, UK) [ 11 ]. In addition, read-out electronics are actively being developed.…”

Section: Introductionmentioning

confidence: 99%

LGAD-Based Silicon Sensors for 4D Detectors

Giacomini

2023

Sensors

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Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

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“…A time resolution better than 20 ps has been achieved in silicon planar sensors with depletion thicknesses 133-285 μm for multiple MIP signals [11], whereas 100 μm silicon pixel detectors with 800 μm × 800 μm size have achieved a time resolution of 106 ps [12]. Currently, 50 μm silicon detectors with internal gain, usually referred to as Low Gain Avalanche Detector (LGAD), are developed by various foundries and show a time resolution of at least 50 ps [13][14][15][16][17][18]. The 4H-SiC detectors also show fast time response, coming from the highly saturated carrier velocity, but no time performance study has been reported so far.…”

Section: Introductionmentioning

confidence: 99%

Time Resolution of the 4H-SiC PIN Detector

et al. 2022

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We address the determination of the time resolution for the 100 μm 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to β particles from a 90Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution (94 ± 1) ps for a 100 μm 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is (73 ± 1) ps after considering the intrinsic leading contributions of the detector to time resolution.

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Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China

Cited by 17 publications

References 11 publications

Simulation of the 4H-SiC Low Gain Avalanche Diode

Simulation of the 4H-SiC Low Gain Avalanche Diode

LGAD-Based Silicon Sensors for 4D Detectors

Time Resolution of the 4H-SiC PIN Detector

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