Radiation hardness of InGaAs/GaAs quantum dots

Guffarth, F.; Heitz, R.; Geller, M.; Kapteyn, C. M. A.; Born, H.; Sellin, R.L.; Hoffmann, A.; Bimberg, D.; Соболев, Н. А.; Carmo, M. C.

doi:10.1063/1.1561165

Cited by 49 publications

(27 citation statements)

References 19 publications

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“…The possibility that degradation to the TiO 2 and InP QDs materials also occurred cannot be dismissed. Based on other radiation effects studies performed on QDs, there is reported data to support the assertion that that the QDs were probably the least affected by the gamma-rays [17][18][19][20][21]. An independent study of the effects of radiation on these components would be required to differentiate the extent of degradation experience by each of the major components comprising the PPD.…”

Section: Inp Qd Ppd Aging Studies and Resultsmentioning

confidence: 74%

“…Inorganic QD infrared photodetectors (QDIPs) operating well into the mid infrared have attracted much attention due to the ability of varying the quantum well structure and dot size in order to change the photoluminescence spectra [16]. Enhanced radiation resistance in QD-doped InAs/GaAs lasers irradiated by various high energy ions have been reported showing that interaction of charge carriers with non-radiative defect centers are reduced due to efficient exciton localization by QDs [17][18][19][20][21].…”

Section: Tuning the Optical Absorption Of Inp Qds To The Near-irmentioning

confidence: 99%

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Advancement of Polymer Detectors for Space Applications

Taylor¹,

Zeng²,

Claus³

2004

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY) 16-03-2004 REPORT TYPE Final Report DATES COVERED (From -To SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)Air Force Research Laboratory Space Vehicles Directorate 3550 Aberdeen Ave., SE SPONSOR/MONITOR'S REPORTKirtland AFB, NM 87117-5776 NUMBER(S) AFRL-VS-PS-TR-2004-1049 DISTRIBUTION / AVAILABILITY STATEMENTAPPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. SUPPLEMENTARY NOTES ABSTRACTPhotovoltaic polymer detectors incorporating Indium Phosphide (InP) and Cadmiume Selenide (CdSe) quantum dots (QDs) were fabricated, characterized for their open circuit voltage and short circuit currents and studied for radiation resistance. InP QD detectors exhibited higher photovoltages and responded further into the near-IR compared to CdSe QD detectors, however, the CdSe QD detectors exhibited higher external quantum efficiencies than InP QD detectors.InP QD detectors showed excellent resistance to gamma-ray and 25.6 MeV protons at a total dose of ~ 150 krad(si), while CdSe QD PPDs irradiated by gamma-rays to 152 krad (Si) damaged more from environmentally-induced aging effects than by ionization-induced processes.The data suggest that both InP and CdSe QD polymer detectors have excellent resistance to irradiation since strong carrier confinement and lifetimes inherent in QDs reduce the interaction with native defect and nuclear caused dislocations compared to conventional quantum well detectors where carriers have greater mobility and can interact freely with recombination centers. Conclusive data demonstrating emerging polymeric materials' resistance to ionizing radiation is critical for eventually applying the technology to space systems. The current lack of a radiation effects data base and absence of rigorous and predictive models for assisting hardened polymer photonics device system designs, best describes the current state-of-the-art. This investigative approach and data resulting from this Phase II effort addresses and responds to these critical issues. SUBJECT TERMSEarly and parallel investigations of the interaction of ionizing radiation with polymer...

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Section: Inp Qd Ppd Aging Studies and Resultsmentioning

confidence: 74%

Section: Tuning the Optical Absorption Of Inp Qds To The Near-irmentioning

confidence: 99%

Advancement of Polymer Detectors for Space Applications

Taylor¹,

Zeng²,

Claus³

2004

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“…23 shows that defects are also introduced into the wetting layer, so at low temperatures, carriers can also be lost by tunnelling to nearby defect states. 24 Mode-locking was observed in these devices with pulse widths reducing by a factor 29 from 8.4 ps at 250 K to 290 fs at 20 K, and this correlates with the temperature dependence of threshold of the same structures, as shown in Fig. 2.…”

mentioning

confidence: 61%

Femtosecond pulse generation in passively mode locked InAs quantum dot lasers

Finch¹,

Blood²,

Smowton³

et al. 2013

Applied Physics Letters

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Optical pulse durations of an InAs two-section passively mode-locked quantum dot laser with a proton bombarded absorber section reduce from 8.4 ps at 250K to 290 fs at 20 K, a factor of 29, with a corresponding increase in optical bandwidth. Rate equation analysis of gain and emission spectra using rate equations suggests this is due to the very low emission rate of carriers to the wetting layer in the low temperature, random population regime which enables dots across the whole inhomogeneous distribution to act as independent oscillators. (C) 2013 AIP Publishing LLC

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“…Although the proton doses here are similar to those used in Ref. 8, their proton energy was much higher at 2.4 MeV so the displacement rate in our experiments is probably much higher because we have chosen the proton energy to maximize the atomic displacement rate in the dot layer itself.…”

Section: Effect Of Proton Bombardment On Inas Dots and Wetting Layer mentioning

confidence: 93%

Effect of proton bombardment on InAs dots and wetting layer in laser structures

O'Driscoll

Blood

Smowton

et al. 2012

Applied Physics Letters

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The effect of proton bombardment on carrier lifetime and photoluminescence of InAs quantum dots was measured. Optical absorption and transmission electron microscopy show the dots retain their integrity under bombardment. A decrease in ground state photoluminescence with increasing dose is not explained by the decrease in dot carrier lifetime alone, but also by bombardment-induced non-radiative recombination in the wetting layer, which reduces the dot electron population at fixed excitation. To exploit the relative radiation immunity of quantum dots, it is necessary to maximise the dot density and capture probability per dot to minimize the effect of wetting layer recombination.

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Radiation hardness of InGaAs/GaAs quantum dots

Cited by 49 publications

References 19 publications

Advancement of Polymer Detectors for Space Applications

Advancement of Polymer Detectors for Space Applications

Femtosecond pulse generation in passively mode locked InAs quantum dot lasers

Effect of proton bombardment on InAs dots and wetting layer in laser structures

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