Femtosecond pulse generation in passively mode locked InAs quantum dot lasers

Finch, P.; Blood, P.; Smowton, Peter M.; Sobiesierski, Angela; Gwilliam, R.; O'Driscoll, I.

doi:10.1063/1.4822433

Cited by 11 publications

(5 citation statements)

References 28 publications

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“…3 at 80 K since these were single pass measurements in the absence of lasing [12]. At 80 K, the calculated escape rates from the dots to the wetting layer becomes very slow so the model no longer predicts a Fermi-Dirac distribution [9].…”

Section: Rate Equation Analysismentioning

confidence: 99%

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Improving the Optical Bandwidth of Passively Mode-Locked InAs Quantum Dot Lasers

Finch

Hutchings

Blood

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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We examine in detail the relation between the optical gain spectra, mode-locked optical emission spectra, and temporal optical pulse widths as a function of temperature between 80 and 300 K in passively mode-locked InAs quantum dot lasers. By increasing the length of the active region, we can decrease the threshold gain requirement for mode locking. At 300 K, where the dot states and wetting layer are close to thermal equilibrium, the bandwidth of the optical emission spectra and temporal optical pulse width remain largely unaffected when the threshold gain requirement is reduced. At 80 K, where the dots are randomly populated, there is a near doubling of the optical bandwidth for the same reduction of the threshold gain requirement and a corresponding decrease in the temporal optical pulse width. Rate equations, which take explicit account of the photon density in the cavity, are used to qualitatively highlight the key parameters, which are responsible for increasing the optical bandwidth in the random population regime.

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Section: Rate Equation Analysismentioning

confidence: 99%

“…We have previously shown that the pulsewidths of mode-locked quantum dot devices decrease with decreasing temperature and at 20 K pulsewidths of 300 fs have been achieved using a proton bombarded absorber section [9].…”

mentioning

confidence: 99%

Improving the Optical Bandwidth of Passively Mode-Locked InAs Quantum Dot Lasers

Finch

Hutchings

Blood

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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“…In particular, MLLs based on semiconductor quantum-dash (Q-Dash) and quantum-dot (QD) materials have attracted profuse research effort, as these offer very large bandwidths, lower threshold current densities and excellent temperature performance making them of great interest for use in ultrafast optical systems (see 18 , 19 for reviews). In recent years, the technology has developed rapidly and QDMLLs with repetition rates up to hundreds of GHz 20 , yielding ultrashort pulse durations 21 , 22 (down to femtosecond regimes), and offering stable mode-locking for wide temperature ranges (up to >100 C) have been reported 23 , 24 . The effect of external optical injection in QDMLLs has also undergone substantial research effort recently 25 – 30 .…”

Section: Introductionmentioning

confidence: 99%

Externally-Triggered Activation and Inhibition of Optical Pulsating Regimes in Quantum-Dot Mode-locked Lasers

Robertson

Ackemann

Lester

et al. 2018

Sci Rep

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Controlled generation and inhibition of externally-triggered picosecond optical pulsating regimes are demonstrated experimentally in a quantum dot mode locked laser (QDMLL) subject to external injection of an amplitude modulated optical signal. This approach also allows full control and repeatability of the time windows of generated picosecond optical pulses; hence permitting to define precisely their temporal duration (from <1 ns spans) and repetition frequency (from sub-Hz to at least hundreds of MHz). The use of a monolithic QDMLL, operating at 1300 nm, provides a system with a very small footprint that is fully compatible with optical telecommunication networks. This offers excellent prospects for use in applications requiring the delivery of ultrashort optical pulses at precise time instants and at tunable rates, such as optical imaging, time-of-flight diagnostics and optical communication systems.

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“…5 It has recently been demonstrated that random occupation in QD systems can improve mode locked laser performance where pulse widths as short as 290 fs were observed from a QD sample at 20 K, believed to be operating in the random regime. 6 The evidence for random occupancy on the dots was provided by fitting model calculations to the radiative threshold current of the laser. Dual wavelength lasing is currently of particular interest 7 due to its applications including terahertz generation, 8 but at present the carrier competition between the QD states is considered to be a significant limiting factor.…”

mentioning

confidence: 99%