Fermi-dirac and random carrier distributions in quantum dot lasers

Abstract

O'Driscoll, Ian; Smowton, P. M.; Blood, P. Publication date 2014Original citation Hutchings, M., O'Driscoll, I., Smowton, P. M. and Blood, P. (2014) 'Fermi-dirac and random carrier distributions in quantum dot lasers',

A silicon-based quantum dot random laser

“…23,24 Recently, random lasers have been fabricated by doping various gain media, such as laser dyes, perovskites, and quantum dots, into arbitrary composited micro/nano-structures based on multiple scattering that can achieve random laser output on the fabrication platform for different materials. [25][26][27][28][29][30][31][32] However, the inuence of a Si NW array on the performance of a random laser has not been explored systematically.…”

Free Carrier Distribution Criterion in Quantum Dot Lasers

“…In order to optimize the device performance, the effect of free carrier distribution among dots and many body effects in a QD laser device are of crucial importance to understand. These can play a major role in the development of new high-speed modulation schemes [2][3] from each other without wetting layer [11] and with state separation more than thermal activation energy (kT=26meV at 300K in InAs/GaAs dots) are suggestive of exhibiting a random carrier distribution trend. In this case, as is theoretically expected that the spectral shapes of the luminescence intensity from each dot and peak intensity wavelength for each of the radiative state would remain unchanged.…”

Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings

“…While SK QD lasers have low threshold current densities (J th ∼ 10 Acm −2 ), their temperature instability still needs to be resolved. For example, the threshold current density of SK QDs still shows a temperature dependence, arising from a non-equilibrium state of the inhomogeneous QDs 11,12 .…”