2020
DOI: 10.1063/5.0020890
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Excitation and temperature dependence of the broad gain spectrum in GaAs/AlGaAs quantum rings

Abstract: We have employed a variable stripe length method in order to measure the optical gain of GaAs/AlGaAs quantum rings. Although the large lateral diameter of quantum rings (∼50 nm) with a few nm size distribution is expected to cause a small spectral inhomogeneity (∼1%), a broad gain width (∼300 meV) was observed. This result was attributed to a variation of the vertical heights and variations in localized states that exhibit crescent shaped wavefunctions, whereby the energy levels are distributed over a broad sp… Show more

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Cited by 3 publications
(1 citation statement)
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“…The effective localized area might be similar to that of CsPbBr 3 NPLs, where the area varies from 350 ∼ 1100 nm 2 . In this case, a 2D center-of-mass exciton confinement model can be considered [36], where the confinement levels are determined by a whole exciton instead of separate electrons and holes. As a result, the stochastic thickness variation possibly results in a broad spectral range with a different density of the states.…”
Section: Resultsmentioning
confidence: 99%
“…The effective localized area might be similar to that of CsPbBr 3 NPLs, where the area varies from 350 ∼ 1100 nm 2 . In this case, a 2D center-of-mass exciton confinement model can be considered [36], where the confinement levels are determined by a whole exciton instead of separate electrons and holes. As a result, the stochastic thickness variation possibly results in a broad spectral range with a different density of the states.…”
Section: Resultsmentioning
confidence: 99%