Radiation hardness of diamond and silicon sensors compared

Abstract

PACS 29.40.Wk, 42.88.+h, 61.80.x, 81.05.UwThe radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si-and C-sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non-Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non-relativistic energies the elastic cross section prevails. The smaller inelastic nucleon-Carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller.

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation‐induced defects

“…A reduction of the maximum CCD (at high fields) was not observed after irradiation, as expected from the high radiation hardness observed in test beams [5].…”

The effect of fast neutron irradiation on the performance of synthetic single crystal diamond particle detectors

“…Various neutron reactions with 12 C are possible at energies up to 14 MeV which subsequently lead to the emission of α-particles as one of the reaction products [32] and deposit a larger amount of energy per unit path length in the detector than a neutron of equivalent energy.…”

“…Radiation damage studies on this high quality synthetic single crystal diamond material have begun to evaluate and gain understanding of the effects of radiation induced defects on the detection performance. [2,11,12] The signal of a radiation detector operated as a solid state ionisation chamber is formed by the integrated induced current, i.e. the induced charge, at the electrodes of the detector by the movement of free charge carriers within the device towards those electrodes under the electric field they experience.…”

“…In addition to the polarisation and priming issues, these structural variations can compromise the comparability of radiation induced damage studies performed on different quality type samples from different sources. Furthermore, the radiation type introducing the damage also plays a role as discussed by de Boer and co-workers [12]. The charge carrier mobility may also be affected by radiation induced defects, although the results by Pomorski et al suggest that the changes in mobility -if present at all -are not significant up to a 26 MeV proton dose of 10 -14 cm -2 [19].…”

Diamond Detector Technology: Status and Perspectives

“…The main difference between the two types of diamonds are their sizes of ∼0.25 cm 2 for scCVD and up to 6 inch for pCVD and the smaller signal in pCVD [5]. In various studies it was shown that compared to corresponding silicon detectors, diamond is at minimum three times more radiation hard [6], has at least a two times faster charge collection [7] and its thermal conductivity is four times higher [8].…”