2009 Device Research Conference 2009
DOI: 10.1109/drc.2009.5354932
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Radiation hardness assessment of high voltage 4H-SiC BJTs

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Cited by 12 publications
(8 citation statements)
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“…The gain is normalized to the value before radiation. Previous investigations on the annealing effects of 4H-SiC bipolar devices irradiated with gamma rays dose of 42 Mrad have showed a full recovery of the Gummel characteristics after an 420 °C anneal for 1800 seconds [22]. In contrast, our sample did not show a full recovery of the gain and instead appears to saturate after the annealing of 425 °C.…”
Section: B) Annealing Effects On Irradiated Devicescontrasting
confidence: 81%
See 1 more Smart Citation
“…The gain is normalized to the value before radiation. Previous investigations on the annealing effects of 4H-SiC bipolar devices irradiated with gamma rays dose of 42 Mrad have showed a full recovery of the Gummel characteristics after an 420 °C anneal for 1800 seconds [22]. In contrast, our sample did not show a full recovery of the gain and instead appears to saturate after the annealing of 425 °C.…”
Section: B) Annealing Effects On Irradiated Devicescontrasting
confidence: 81%
“…The selection is somewhat arbitrary and does not claim to be extensive. However, the results presented for the SiGe [24] and 4H-SiC power BJT [22] is the best radiation hard device (in terms of gain degradation) under gamma ray authors have found in the literature. It can be clearly observed that our device with 4H-SiC technology has a superior tolerance to gamma radiation.…”
Section: B) Annealing Effects On Irradiated Devicesmentioning
confidence: 96%
“…After annealing, the saturated current levels become even lower, leading to a further degradation of the gain. This behavior at relatively low annealing temperatures is in sharp contrast to the observation by Nawaz et al [21], where gamma rays were used to induce ionization in the oxide. In this paper, it was shown that the effect of gamma irradiation could be annealed at 420 • C. This is an important observation that shows how different types of irradiation will influence the BJT operation.…”
Section: Resultscontrasting
confidence: 57%
“…JFETs and BJTs in particular aremuch more radiation hard than devices such as MOSFETs with a delicate gate dielectrics that may be affected by radiation. In [41,42] radhard demonstration results revealed that BJTs exposed to high energy gamma rays and heavy ion bombardment can withstand 100-1000 times higher doses than a corresponding Si power device.…”
Section: Radiation Hardness In Wbgmentioning
confidence: 97%