Radiation hardness assessment of high voltage 4H-SiC BJTs

Nawaz, Muhammad; Zaring, Carina; Onoda, Shinobu; Ohshima, Takeshi; Östling, Mikael

doi:10.1109/drc.2009.5354932

Cited by 12 publications

(8 citation statements)

References 3 publications

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“…The gain is normalized to the value before radiation. Previous investigations on the annealing effects of 4H-SiC bipolar devices irradiated with gamma rays dose of 42 Mrad have showed a full recovery of the Gummel characteristics after an 420 °C anneal for 1800 seconds [22]. In contrast, our sample did not show a full recovery of the gain and instead appears to saturate after the annealing of 425 °C.…”

Section: B) Annealing Effects On Irradiated Devicescontrasting

confidence: 81%

“…The selection is somewhat arbitrary and does not claim to be extensive. However, the results presented for the SiGe [24] and 4H-SiC power BJT [22] is the best radiation hard device (in terms of gain degradation) under gamma ray authors have found in the literature. It can be clearly observed that our device with 4H-SiC technology has a superior tolerance to gamma radiation.…”

Section: B) Annealing Effects On Irradiated Devicesmentioning

confidence: 96%

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High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Suvanam

Kuroki

Lanni

et al. 2017

IEEE Trans. Nucl. Sci.

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Section: B) Annealing Effects On Irradiated Devicescontrasting

confidence: 81%

Section: B) Annealing Effects On Irradiated Devicesmentioning

confidence: 96%

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Suvanam

Kuroki

Lanni

et al. 2017

IEEE Trans. Nucl. Sci.

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“…After annealing, the saturated current levels become even lower, leading to a further degradation of the gain. This behavior at relatively low annealing temperatures is in sharp contrast to the observation by Nawaz et al [21], where gamma rays were used to induce ionization in the oxide. In this paper, it was shown that the effect of gamma irradiation could be annealed at 420 • C. This is an important observation that shows how different types of irradiation will influence the BJT operation.…”

Section: Resultscontrasting

confidence: 57%

Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

Usman

Hallén

2012

IEEE Trans. Electron Devices

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Degradation of SiO 2 surface passivation for 4H-SiC power bipolar junction transistors (BJTs) as a result of ion irradiation has been studied to assess the radiation hardness of these devices. Fully functional BJTs with 2700 V breakdown voltage are implanted with 600 keV helium ions at fluences ranging from 1 × 10 12 to 1 × 10 16 cm −2 at room temperature. These ions are estimated to reach the SiO 2 /SiC interface. The current-voltage characteristics before and after irradiation show that the current gain of the devices starts degrading after a helium fluence of 1 × 10 14 cm −2 and decreases up to 20% for the highest fluence of ions. Simulations show that the helium ions induce ionization inside the SiO 2 , which increases the interface charge and leads to a degradation of the BJT performance. Thermal annealing of the irradiated devices at 300 • C, 420 • C, and 500 • C further increases the amount of charge at the interface, resulting in increased base current in the low-voltage range.

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“…JFETs and BJTs in particular aremuch more radiation hard than devices such as MOSFETs with a delicate gate dielectrics that may be affected by radiation. In [41,42] radhard demonstration results revealed that BJTs exposed to high energy gamma rays and heavy ion bombardment can withstand 100-1000 times higher doses than a corresponding Si power device.…”

Section: Radiation Hardness In Wbgmentioning

confidence: 97%

High power devices in wide bandgap semiconductors

Östling

2011

Sci. China Inf. Sci.

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Silicon carbide (SiC) semiconductor devices for high power applications are now commercially available as discrete devices. Recently Schottky diodes are offered by both USA and Europe based companies. Active switching devices such as bipolar junction transistors (BJTs), field effect transistors (JFETs and MOSFETs) are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The main advantages of wide bandgap semiconductors are their very high critical electric field capability. From a power device perspective the high critical field strength can be used to design switching devices with much lower losses than conventional silicon based devices both for on-state losses and reduced switching losses. This paper will review the current state of the art in active switching device performance for both SiC and GaN devices. SiC material quality and epitaxy processes have greatly improved and degradation free 100 mm wafers are readily available. This is encouraging since also bipolar devices now are attractive with good long term stability. SiC wafers still have a too high cost to be fully cost efficient. However, the SiC wafer roadmap looks very favorable as volume production takes off. For GaN materials the main application area is geared towards the lower power rating level up to 1 kV on mostly lateral FET designs. The cost advantage is interesting for GaN when grown on Si substrates to bring down costs.

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Radiation hardness assessment of high voltage 4H-SiC BJTs

Cited by 12 publications

References 3 publications

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

Impact of Ionizing Radiation on the $\hbox{SiO}_{2}/ \hbox{SiC}$ Interface in 4H-SiC BJTs

High power devices in wide bandgap semiconductors

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