Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC

Pernegger, H.; Allport, P. P.; Tortajada, Ignacio Asensi; Barbero, M.; Barrillon, P.; Berdalovic, I.; Bespin, C.; Bhat, S.; Bortoletto, D.; Breugnon, P.; Buttar, C. M.; Cardella, R.; Dachs, F.; Dao, V.; Değerli, Y.; Denizli, H.; Dyndał, M.; Acedo, Leyre Flores Sanz de; Freeman, P. M.; Hemperek, T.; Hirono, T.; Hiti, B.; Kugathasan, T.; Mandić, I.; Mikuž, M.; Moustakas, Konstantinos; Münker, Magdalena; Oyulmaz, Kaan Yüksel; Pangaud, P.; Piro, F.; Riedler, P.; Sandaker, H.; Schioppa, E. J.; Schwemling, Philippe; Sharma, A.; Argemi, L. Simon; Sánchez, Carlos Solans; Snoeys, W.; Suligoj, Tomislav; Wang, T.; Wermes, N.

doi:10.1016/j.nima.2020.164381

Cited by 19 publications

(12 citation statements)

References 8 publications

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“…Complementary measurements with a focused x-ray beam at Diamond Light Source showed improved charge collection efficiency in the pixel corners with respect to the original process modification [7]. Subsequently, full size MALTA prototypes with the additional process modifications (NGAP and EDPW) were produced on Czochralski substrates, to aim for larger charge collection and higher depletion voltages, and showed almost full efficiency of samples irradiated to 1e15 n eq /cm 2 [8]. In the following we present a subset of these results focused on cluster size, tracking, and time resolution.…”

Section: The Malta Prototypesmentioning

confidence: 98%

Radiation hard monolithic CMOS sensors with small electrodes for the HL-LHC and beyond

Sánchez¹,

Allport²,

Tortajada³

et al. 2021

Proceedings of 40th International Conference on High Energy Physics — PoS(ICHEP2020)

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The upgrade of tracking detectors for experiments at the HL-LHC and future colliders requires the development of novel radiation hard silicon sensors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation hard monolithic CMOS sensors. We designed, manufactured and tested DMAPS in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs, that have a pixel pitch well below the current hybrid pixel detectors, and less multiple scattering due to a reduced total silicon thickness. In this document we present the recent results from these sensors manufactured on Czochralski silicon substrates in terms of cluster size, impact on tracking and time resolution from measurements carried out at beam tests on irradiated samples at 1e15 1 MeV n eq /cm 2 .

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Section: The Malta Prototypesmentioning

confidence: 98%

Radiation hard monolithic CMOS sensors with small electrodes for the HL-LHC and beyond

Sánchez¹,

Allport²,

Tortajada³

et al. 2021

Proceedings of 40th International Conference on High Energy Physics — PoS(ICHEP2020)

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“…Challenges of this approach include the routing of the signals to the chip periphery and will depend on the technology chosen and the feature size of it. Some of these concepts have already been incorporated in ASICs such as the MALTA/Monopix chip [25] implemented in a modified Tower Jazz 180 nm process, and optimised for radiation hardness and speed [26], and were also included in the CLICTD sensor chip [27], optimised for extended efficiency for ultra-thin silicon trackers.…”

Section: Monolithic Cmos Mapsmentioning

confidence: 99%

Tracking and vertex detectors at FCC-ee

2022

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The combined vertexing and tracking performance of the innermost part of the FCC-ee experiments must deliver outstanding precision for measurement of the track momentum together with an impact parameter resolution exceeding by at least a factor five that typically achieved at LHC experiments. Furthermore, precision measurements require stability and fiducial accuracy at a level which is unprecedented in collider experiments. For the innermost vertex layers these goals translate into a target hit resolution of approximately 3 $$\mu \hbox {m}$$ μ m together with a material budget of around 0.2% of a radiation length per layer. Typically this performance might be provided by silicon-based tracking, together with a careful choice of a low-mass cooling technology, and a stable, low-mass mechanical structure capable of providing measurements with a low enough systematic error to match the tremendous statistics expected, particularly for the run around the Z resonance. At FCC-ee, the magnetic field will be limited to approximately 2 T, in order to contain the vertical emittance at the Z pole, and a tracking volume up to relative large radius is needed. The technological solution could be silicon- or gaseous-based tracking, in both cases with the focus on optimising the material budget, and particle identification capability would be an advantage. Depending on the global design, an additional silicon tracking layer could be added at the outer radius of the tracker to provide a final precise point contributing to the momentum or possibly time-of-flight measurement. Current developments in monolithic and hybrid silicon technology, as well as advanced gaseous tracking developments, provide an encouraging road map towards the FCC-ee detector. The current state of the art and potential extensions will be discussed and a generic call for technology which could have a significant impact on the performance of an FCC-ee tracking and vertexing detector is outlined.

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“…The size of the active sensor volume is limited by the thickness of the 30 µm epitaxial layer. To increase the active volume, an alternative substrate material is studied, which consists of high-resistivity (few kΩ cm) p-type Czochralski silicon [7]. The implants are introduced directly on the Czochralski substrate and no additional epitaxial layer is grown on top.…”

Section: Sensor Materialsmentioning

confidence: 99%

“…High-resistivity substrate materials are therefore investigated as a possible replacement, extending both the bounded depletion and active sensor depth thus leading to a higher measured signal. In this document, a highresistivity Czochralski substrate as alternative wafer material is assessed, which has already proven to increase efficiency after irradiation in the small collection-electrode design [7].…”

Section: Introductionmentioning

confidence: 99%

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

Dort,

Ballabriga,

Braach

et al. 2022

Preprint

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Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. Charged particle beams are used to study the charge-collection properties and the performance of devices with different thicknesses both for perpendicular and inclined particle incidence. In CMOS sensors with a high-resistivity Czochralski substrate, the depth of the sensitive volume is found to increase by a factor two in comparison with standard epitaxial material and leads to significant improvements in the hit-detection efficiency and the spatial and time resolution.

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Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC

Cited by 19 publications

References 8 publications

Radiation hard monolithic CMOS sensors with small electrodes for the HL-LHC and beyond

Radiation hard monolithic CMOS sensors with small electrodes for the HL-LHC and beyond

Tracking and vertex detectors at FCC-ee

Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD

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