Radiation-hard design for SOI MOS inverters

Francis, P.; Michel, Christian; Flandre, Denis; Colinge, J.P.

doi:10.1109/23.281534

Cited by 18 publications

(7 citation statements)

References 9 publications

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“…The resulting larger capacitances is one of the major disadvantages of the GAA device since larger capacitances imply lower frequency operation. Nevertheless, it is somewhat counterbalanced by the significant increase of the GAA MOS transconductance when compared to standard MOSFET's due to double-gate conduction and volume inversion [1], which implies a reduction of the required width and hence associated parasitic capacitances for a given frequency performance.…”

Section: A Basic Equations For Gaa Devicesmentioning

confidence: 99%

“…12) decreases with dose due to creation of interface states. The subthreshold slope factor also degrades during irradiation due to the creation of additional interface states ( ) according to (1).…”

Section: A Gaa Devices Characteristicsmentioning

confidence: 99%

“…As for the high-temperature characterization, the evolution of analog parameters with dose can again be related to the threshold voltage, mobility, and subthreshold slope evolution [1], [2]. The devices were kept biased during irradiation.…”

Section: A Gaa Devices Characteristicsmentioning

confidence: 99%

“…Owing to their double-gate structure, GAA MOSFET's remain fully depleted at very high temperatures and present low total dose degradation since the active region is surrounded only by high-quality gate oxide. Operation of GAA devices and digital circuits has already been demonstrated at high temperatures (320 C) and for high total doses [85 Mrad (Si)] [1], [2]. The present work focuses on the design of GAA operational amplifiers and the evolution of their performance with temperature and dose through two basic MOSFET analog parameters: the transconductance-to-drain current ratio , also referred to as the scaled transconductance, and the inverse of the output conductance-to-drain current ratio , also referred to as the early voltage .…”

Section: Introductionmentioning

confidence: 99%

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Gate-all-around OTA's for rad-hard and high-temperature analog applications

Vandooren¹,

Colinge²,

Flandre³

1999

IEEE Trans. Nucl. Sci.

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Performance of operational transconductance amplifiers (OTA's) fabricated in the gate-all-around SOI technology is described at elevated temperature and after total dose irradiation. Design guidelines using two analog parameters (early voltage and transconductance to drain current ratio) are proposed for correct operation in these two different harsh environments. The design methodology using the two analog parameters of interest is proposed and applied to the specific case of the GAA technology. The temperature and dose dependence of the two above design parameters are then presented. Two different OTA architectures are considered: a single-stage amplifier and a folded cascode amplifier. Experimental results obtained separately for each environment are discussed. High-temperature measurements were performed up to 300 C, while total dose measurements were obtained for doses up to 15 Mrad(Si) total dose of gamma rays from a 60 Co source.

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Section: A Basic Equations For Gaa Devicesmentioning

confidence: 99%

Section: A Gaa Devices Characteristicsmentioning

confidence: 99%

Section: A Gaa Devices Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Gate-all-around OTA's for rad-hard and high-temperature analog applications

Vandooren¹,

Colinge²,

Flandre³

1999

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Due to the increasing demand for circuits to operate in extreme environment from the industries, such as oil, gas, aerospace, military companies, harsh electronics have drawn more and more attention [1][2][3][4][5][6][7]. While much insight on device physics of harsh electronics has been gained in recent years, understanding of the relation between device process and circuit performance has been rather limited [8][9].…”

Section: Introductionmentioning

confidence: 99%

Device Process and Circuit Application Interaction for Harsh Electronics: Hf–In–Zn–O Thin Film Transistors as an Example

Tsai

Lü

et al. 2017

IEEE Electron Device Lett.

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Repairable Polymer Solid Electrolyte Gated MoS₂ Field Effect Devices with Large Radiation Tolerance

Chen

Zheng

et al. 2021

Adv Elect Materials

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As human activities expand into naturally or man‐made radiation‐prone environment, the need for radiation‐hardened (Rad‐Hard) electronic hardware surges. The state‐of‐the‐art silicon‐based and 2D materials‐based Rad‐Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here, few‐layer MoS2 Rad‐Hard field‐effect transistors (FETs) with polymer solid electrolyte (PSE) gate dielectrics are presented. The MoS2 PSE‐FETs exhibit a TID tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s−1 and can be repaired with a moderate thermal annealing at 100 °C for 5 min. Combining the excellent intrinsic radiation tolerance and the reparability, the MoS2 PSE‐FETs reach a TID tolerance of up to 10 Mrad (Si). Complementary metal–oxide–semiconductor‐like MoS2 PSE‐inverters are built and show high radiation tolerance as well. Furthermore, the feasibility of wafer‐scale Rad‐Hard PSE‐inverter array is demonstrated using chemical vapor deposition grown monolayer MoS2. These studies uncover the potential of 2D materials‐based PSE devices in future Rad‐Hard integrated circuits.

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Radiation-hard design for SOI MOS inverters

Cited by 18 publications

References 9 publications

Gate-all-around OTA's for rad-hard and high-temperature analog applications

Gate-all-around OTA's for rad-hard and high-temperature analog applications

Device Process and Circuit Application Interaction for Harsh Electronics: Hf–In–Zn–O Thin Film Transistors as an Example

Repairable Polymer Solid Electrolyte Gated MoS₂ Field Effect Devices with Large Radiation Tolerance

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Radiation-hard design for SOI MOS inverters

Cited by 18 publications

References 9 publications

Gate-all-around OTA's for rad-hard and high-temperature analog applications

Gate-all-around OTA's for rad-hard and high-temperature analog applications

Device Process and Circuit Application Interaction for Harsh Electronics: Hf–In–Zn–O Thin Film Transistors as an Example

Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance

Contact Info

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Repairable Polymer Solid Electrolyte Gated MoS₂ Field Effect Devices with Large Radiation Tolerance