Radiation effects studies on thin film TiO&lt;inf&gt;2&lt;/inf&gt; memristor devices

DeIonno, Erica; Looper, M. D.; Osborn, J.V.; Barnaby, Hugh; Tong, William M.

doi:10.1109/aero.2013.6497378

Cited by 15 publications

(26 citation statements)

References 13 publications

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“…The results provided in [21], [22] also indicate that Ti02 memristive devices have a high tolerance to TID.…”

Section: Ti02 and Hfox-based Memristive Devicesmentioning

confidence: 78%

“…However, these modeling and experimental efforts are beyond the scope of this paper. TaOx [3], [4], [14], [17][18][19], Dose rate, TID, [23], [33], [34] heavy ion Ti02 [4], [20][21][22], [24], [25] TID, heavy ion HfOx [26], [28][29][30] TID, heavy ion…”

Section: Radiation Effects In Memristorsmentioning

confidence: 99%

“…There are also numerous papers that have investigated the TID and heavy ion response of Ti02 [4], [20][21][22], [24], [25] and HfOx [26], [28][29][30] memristors. In general, the results are promising and suggest that there is minimal impact on the electrical characteristics until higher TID and fluence levels have been reached.…”

Section: Ti02 and Hfox-based Memristive Devicesmentioning

confidence: 99%

“…In this paper we will provide an overview of several studies that have investigated the impact of high dose rate ionizing radiation, total ionizing dose (TID), and heavy ions on the electrical characteristics of TaOx, Ti02, and HfOx memristors [3], [4], [14], [17][18][19][20][21][22][23][24][25][26][27][28][29][30]. However, an emphasis will be placed on the response of TaOx memristors.…”

Section: Introductionmentioning

confidence: 99%

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Overview of the radiation response of anion-based memristive devices

McLain

Marinella

2015

2015 IEEE Aerospace Conference

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“…The results provided in [21], [22] also indicate that Ti02 memristive devices have a high tolerance to TID.…”

Section: Ti02 and Hfox-based Memristive Devicesmentioning

confidence: 78%

Section: Radiation Effects In Memristorsmentioning

confidence: 99%

Section: Ti02 and Hfox-based Memristive Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Overview of the radiation response of anion-based memristive devices

McLain

Marinella

2015

2015 IEEE Aerospace Conference

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“…In the majority of the experiments, the devices were switched into the high resistance off-state prior to being irradiated. The off-state is generally considered to be more susceptible to radiation based on previous experiments conducted on TMO-based memristive devices [19]- [21], [24], [28]- [31]. However, the devices were also tested in the low resistance on-state to ensure that there was not an unforeseen vulnerability to pulsed ionizing radiation.…”

Section: Methodsmentioning

confidence: 99%

The Susceptibility of <formula formulatype="inline"> <tex Notation="TeX">${\hbox {TaO}}_{\rm x}$</tex></formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

McLain

Hjalmarson

Sheridan

et al. 2014

IEEE Trans. Nucl. Sci.

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This paper investigates the effects of high dose rate ionizing radiation and total ionizing dose (TID) on tantalum oxide (TaO ) memristors. Transient data were obtained during the pulsed exposures for dose rates ranging from approximately rad(Si)/s to rad(Si)/s and for pulse widths ranging from 50 ns to s. The cumulative dose in these tests did not appear to impact the observed dose rate response. Static dose rate upset tests were also performed at a dose rate of rad(Si)/s. This is the first dose rate study on any type of memristive memory technology. In addition to assessing the tolerance of TaO memristors to high dose rate ionizing radiation, we also evaluated their susceptibility to TID. The data indicate that it is possible for the devices to switch from a high resistance off-state to a low resistance on-state in both dose rate and TID environments. The observed radiation-induced switching is dependent on the irradiation conditions and bias configuration. Furthermore, the dose rate or ionizing dose level at which a device switches resistance states varies from device to device; the enhanced susceptibility observed in some devices is still under investigation. Numerical simulations are used to qualitatively capture the observed transient radiation response and provide insight into the physics of the induced current/voltages. Index Terms-Dose rate, memristors, pulsed ionizing radiation, tantalum oxide ( TaO ) , total ionizing dose (TID), transient radiation effects. 0018-9499

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Effects of memristive synapse radiation interactions on learning in spiking neural networks

2021

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This study uses advanced modeling and simulation to explore the effects of external events such as radiation interactions on the synaptic devices in an electronic spiking neural network. Specifically, the networks are trained using the spike-timing-dependent plasticity (STDP) learning rule to recognize spatio-temporal patterns (STPs) representing 25 and 100-pixel characters. Memristive synapses based on a TiO2 non-linear drift model designed in Verilog-A are utilized, with STDP learning behavior achieved through bi-phasic pre- and post-synaptic action potentials. The models are modified to include experimentally observed state-altering and ionizing radiation effects on the device. It is found that radiation interactions tend to make the connection between afferents stronger by increasing the conductance of synapses overall, subsequently distorting the STDP learning curve. In the absence of consistent STPs, these effects accumulate over time and make the synaptic weight evolutions unstable. With STPs at lower flux intensities, the network can recover and relearn with constant training. However, higher flux can overwhelm the leaky integrate-and-fire post-synaptic neuron circuits and reduce stability of the network.

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Radiation effects studies on thin film TiO<inf>2</inf> memristor devices

Cited by 15 publications

References 13 publications

Overview of the radiation response of anion-based memristive devices

Overview of the radiation response of anion-based memristive devices

The Susceptibility of <formula formulatype="inline"> <tex Notation="TeX">${\hbox {TaO}}_{\rm x}$</tex></formula>-Based Memristors to High Dose Rate Ionizing Radiation and Total Ionizing Dose

Effects of memristive synapse radiation interactions on learning in spiking neural networks

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