Radiation effects on solid state imaging devices

Hopkinson, G.R.

doi:10.1016/0969-806x(94)90203-8

Cited by 19 publications

(9 citation statements)

References 73 publications

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“…In direct-conversion FPDs, degradation is principally the result of electrical discharge and heat, and it occurs mainly in the following components. [3][4][5] Similar to the case for the indirect-conversion FPD, this transistor is affected by the ionizing radiation, and the pixel values fluctuate, and dot or line defects appear.…”

Section: Direct-conversion Fpdsmentioning

confidence: 91%

“…Until now, there have been numerous studies on the radiation damage of image sensors [3][4][5]. For example, Boudry et al [4] reported on the radiation damage to amorphous silicon photodiode sensors.…”

Section: Degradation Of Fpdsmentioning

confidence: 99%

“…2.1.1.3 Charge-transport transistor [3][4][5] The transistor in the charge-transport circuit can also be damaged by ionizing radiation, and as a consequence, the pixel values fluctuate, or dot or line defects appear.…”

Section: Indirect-conversion Fpdsmentioning

confidence: 99%

“…[3][4][5] Degradation of the photodiode occurs near the oxide film as a result of the accumulation of electron holes which are produced by the ionizing radiation, and the dark current in the photodiode increases. These holes easily accumulate in the region of residual defects introduced during the semiconductor manufacturing process, and the increase in the dark current generally occurs locally.…”

Section: Indirect-conversion Fpdsmentioning

confidence: 99%

“…The semiconductors utilized in FPDs change their electrical characteristics due to the effects of radiation, and consequently, the input-output characteristics of the image also change [3][4][5][6]. Degradation of FPDs according to the radiation dose is seeing accelerating progress [4,5].…”

Section: Introductionmentioning

confidence: 98%

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Development of quality control system for flat-panel detectors

Teramoto

Kajihara

Suzuki

et al. 2011

Radiol Phys Technol

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The characteristics of flat-panel detectors (FPD) are degraded by exposure to radiation. Degradation in a FPD progresses locally and has a nonlinear relationship to the radiation dose. In order to manage FPD systems properly, one must perform quality control (QC) such as evaluation of image degradation. However, no evaluation method for degradation has been established. In this paper, we first review the structure and degradation mechanism of FPDs, and then we propose a daily QC system for FPDs. To evaluate the degradation of FPDs, we investigated the number of defective pixels and lines, as well as the offset level of the pixel output. Furthermore, we developed daily QC software for FPD that can evaluate the image quality and is operationally simple. In the experiments, an indirect-conversion type FPD was evaluated by our proposed system. The offset level of FPD increased exponentially with X-ray exposure; no trends were seen for the number of defective pixels and defective lines. The required time for the evaluation of an FPD was about 1 min, and no special skills were needed for the analysis. These results indicate that our system may be useful for daily QC of FPDs.

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Section: Direct-conversion Fpdsmentioning

confidence: 91%