Radiation effects on NDL prototype LGAD sensors after proton irradiation

Tan, Yuhang; Yang, Tao; Xiao, Siyou; Wu, Kewei; Wang, Lei; Li, Yaoqian; Liu, Zhenwei; Liang, Z.; Han, Dejun; Zhang, Xingan; Shi, X.

doi:10.1016/j.nima.2021.165559

Cited by 10 publications

(7 citation statements)

References 19 publications

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“…The Silicon Low Gain Avalanche Diode (LGAD) has been verified that has better than 50 ps time resolution due to its good S/N between the low gain range (10∼100). And also it has been developed successfully by the various foundries in the past few years [3][4][5][6][7][8][9][10][11]. However, present studies indicate the collected charges of Silicon LGAD decrease rapidly when the irradiation flux up to 2.5×10 15 n eq /cm 2 .…”

Section: Introductionmentioning

confidence: 76%

“…However, present studies indicate the collected charges of Silicon LGAD decrease rapidly when the irradiation flux up to 2.5×10 15 n eq /cm 2 . Besides, the Silicon LGAD needs be cooling to -30 • C to offset the rapidly rising of leakage current in the extreme irradiation environment [11][12][13]. Compared with Silicon, 4H-SiC has higher atomic displacement energy, higher saturated velocity and stability in high temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Simulation of the 4H-SiC Low Gain Avalanche Diode

Yang¹,

Tan²,

Wang³

et al. 2022

Preprint

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Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness d gain = 0.5 µm is adopted in our design. We design two different types of 4H-SiC LGAD which have two types electric field, and the corresponding leakage current, capacitance and gain are simulated by TCAD tools. Through analysis of the simulation results, the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.

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Section: Introductionmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Simulation of the 4H-SiC Low Gain Avalanche Diode

Yang¹,

Tan²,

Wang³

et al. 2022

Preprint

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“…A time resolution better than 20 ps has been achieved in silicon planar sensors with depletion thicknesses 133-285 μm for multiple MIP signals [11], whereas 100 μm silicon pixel detectors with 800 μm × 800 μm size have achieved a time resolution of 106 ps [12]. Currently, 50 μm silicon detectors with internal gain, usually referred to as Low Gain Avalanche Detector (LGAD), are developed by various foundries and show a time resolution of at least 50 ps [13][14][15][16][17][18]. The 4H-SiC detectors also show fast time response, coming from the highly saturated carrier velocity, but no time performance study has been reported so far.…”

Section: Introductionmentioning

confidence: 99%

Time Resolution of the 4H-SiC PIN Detector

et al. 2022

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We address the determination of the time resolution for the 100 μm 4H-SiC PIN detectors fabricated by Nanjing University (NJU). The time response to β particles from a 90Sr source is investigated for the detection of the minimum ionizing particles (MIPs). We study the influence of different reverse voltages, which correspond to different carrier velocities and device sizes, and how this correlates with the detector capacitance. We determine a time resolution (94 ± 1) ps for a 100 μm 4H-SiC PIN detector. A fast simulation software, termed RASER (RAdiation SEmiconductoR), is developed and validated by comparing the waveform obtained from simulated and measured data. The simulated time resolution is (73 ± 1) ps after considering the intrinsic leading contributions of the detector to time resolution.

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“…The deteriorations of the collected charge and timing resolution for LGAD sensor after irradiation is due to the acceptor removal mechanism as described in Refs. [4][5][6][7]. Refs.…”

Section: Introductionmentioning

confidence: 99%

The performance of IHEP-NDL LGAD sensors after neutron irradiation

Li,

Fan,

Liu

et al. 2021

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A: The performances of Low Gain Avalanche diode (LGAD) sensors from a neutron irradiation campaign with fluences of 0.8 ×10 15 , 1.5 ×10 15 and 2.5 ×10 15 n eq /cm 2 are reported in this article. These LGAD sensors are developed by the Institute of High Energy Physics, Chinese Academy of Sciences and the Novel Device Laboratory for the High Granularity Timing Detector of the High Luminosity Large Hadron Collider. The timing resolution and collected charge of the LGAD sensors were measured with electrons from a beta source. After irradiation with a fluence of 2.5 ×10 15 n eq /cm 2 , the collected charge decreases from 40 fC to 7 fC, the signal-to-noise ratio deteriorates from 48 to 12, and the timing resolution increases from 29 ps to 39 ps.

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Radiation effects on NDL prototype LGAD sensors after proton irradiation

Cited by 10 publications

References 19 publications

Simulation of the 4H-SiC Low Gain Avalanche Diode

Simulation of the 4H-SiC Low Gain Avalanche Diode

Time Resolution of the 4H-SiC PIN Detector

The performance of IHEP-NDL LGAD sensors after neutron irradiation

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