Radiation Effects on Aluminosilicate Optical Fibers: Spectral Investigations From the Ultraviolet to Near‐Infrared Domains

Alessi, A.; Guttilla, Angela; Girard, Sylvain; Agnello, S.; Cannas, Marco; Robin, Thierry; Boukenter, Aziz; Ouerdane, Y.

doi:10.1002/pssa.201800485

Cited by 13 publications

(7 citation statements)

References 15 publications

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“…[ 32 ] We also know that the Al‐OHC contribution is only 30% of the RIA detected at 1310 nm and is one order of magnitude lower than the RIA at 1550 nm. [ 25 ] Then, as the spectral shape here reported is very close to that reported in the previous study, [ 25 ] even in the present case, the 2.3 eV band of the Al‐OHCs is not sufficient to explain the RIA in the NIR. Based on our data, we suggest that, as it was reported for 2.3 eV, the kinetics of the additional contributions are not noticeably dependent on Al content, dose rate and irradiation history, drawing parameter, and preform manufacturing process within the here explored ranges.…”

Section: Discussionsupporting

confidence: 89%

“…However, the RIA spectra remain the same whatever the employed steady‐state irradiation parameters (dose rate and temperature) or investigated samples. Similar results were reported for the RIA detected in the visible range, [ 25 ] where the 2.3 eV band attributed to Al‐OHC is peaked. This band contributes only about 30% of the RIA detected at 1310 nm, and its contribution is estimated to be one order of magnitude lower than the RIA level at 1550 nm.…”

Section: Introductionsupporting

confidence: 88%

“…From previous data, [ 25 ] we know that the shorter the wavelength, the higher the contribution of the absorption tail related to the Al‐OHC band peaked at 539 nm (2.3 eV). [ 32 ] We also know that the Al‐OHC contribution is only 30% of the RIA detected at 1310 nm and is one order of magnitude lower than the RIA at 1550 nm.…”

Section: Discussionmentioning

confidence: 99%

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Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers

Alessi

Guttilla

Agnello

et al. 2021

Physica Status Solidi (a)

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The X‐ray radiation‐induced attenuation (RIA) growth kinetics are studied online in different single‐mode aluminosilicate optical fibers in the near‐IR (NIR) domain to evaluate their potential in terms of dosimetry. The optical fibers differ by Al contents, core sizes, drawing parameters, and also by a preform deposition process. The data show no dependence of the RIA on all these parameters, a positive result for the design of point or distributed radiation detectors exploiting RIA to monitor the dose. The RIA growth rate is unchanged for dose rates changing from 0.073 to 6.25 Gy(SiO2) s−1, and the RIA linearly increases with the dose up to 2 kGy(SiO2). Small but noticeable RIA changes are observed when the irradiation temperature increases up to 50 °C during successive irradiation runs. Such results, and the post‐irradiation RIA recovery, have to be considered for the application, as they can affect the dose measurement accuracy. Finally, the spectral analysis shows no dependence of the spectral shape on the fiber and irradiation parameters. As a consequence, the data reported at 1310 and 1550 nm give information not only for the RIA kinetics at telecommunications and sensor wavelengths but also for the whole NIR range often used fiber‐based technologies.

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Section: Discussionsupporting

confidence: 89%

Section: Introductionsupporting

confidence: 88%

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Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers

Alessi

Guttilla

Agnello

et al. 2021

Physica Status Solidi (a)

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“…For all the investigated power levels, after the irradiation starts, RIA kinetics quickly grow as the dose increases up to %3.3 kGy, where they reach a peak, and then begin to decrease. This behavior, typical of strain-assisted STH (s-a STH) bands at 660 and 760 nm, [15,16] points out an extreme sensitivity to radiations of this OFs class, allowing the RIA to reach magnitudes beyond those already achieved in literature by typical radiation-sensitive OFs, [5] as phosphosilicate and aluminosilicate OFs typically used for dosimetry applications, [17][18][19] usually characterized by a RIA of the order of %10-200 dB km À1 for accumulated doses of about hundreds of Gy.…”

Section: Resultsmentioning

confidence: 66%

Photobleaching Effect on the Radiation‐Induced Attenuation of an Ultralow Loss Optical Fiber at Telecommunication Wavelengths

Campanella

Morana

Michele

et al. 2021

Physica Status Solidi (a)

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Among the various advantages of optical fibers (OFs), low attenuation remains one of the most significant features, especially in the second and third telecom windows (around 0.5 and 0.2 dB km À1 ) at 1.31 and 1.55 μm wavelengths. [1] Ongoing studies are underway to limit as much as possible optical losses to overcome the limitations encountered in the design of telecommunication systems, to transfer information over longer distances (trans-oceanic transmission) without repeaters and/or signal regeneration. To date, the aforementioned attenuation limit, typically referring to commercial germanosilicate OFs (as the Corning SMF-28 and its latest enhanced versions) has been passed by a new generation of ultralow loss (ULL) OFs, whose core is composed essentially of pure silica (PSC-pure-silica core) with a low fluorine codoping. [2] With an appropriate and optimized manufacturing process, this new class of waveguides allows reducing the disorder in the microscopic glass structure and, as a result, the Rayleigh scattering losses that mostly explained the attenuation at Telecom windows. Losses as low as 0.14 dB km À1 at 1550 nm are today achieved. [2] When OFs are integrated in harsh environments associated with radiation constraints (e.g., space applications, fusiondevoted facilities, nuclear waste repositories), new sources of optical losses are added to the fiber intrinsic attenuation. In fact, radiations degrade the signal propagation inside the OF by generating radiation-induced point defects in the silica glass matrix. [3] These defects are associated with different absorption bands peaking in the ultraviolet, visible and infrared domains, reducing the silica transparency. This phenomenon, called radiation-induced attenuation (RIA), then logically depends on the OF intrinsic characteristics (chemical composition, geometry, and manufacturing process), on the environmental constraints (nature of particles, dose, dose rate, and temperature) as well as on the fiber profile of use (probing wavelength, signal power, and temperature). Indeed, all these parameters influence the defect generation efficiency or recovery processes through thermal or photo-assisted processes.From literature, it is known that PSC and F-doped OFs are, in terms of RIA, among the most radiation-resistant waveguides. [3,4] However, a new commercial ULL-PSC OF, the Corning Vascade EX1000, was recently found to be characterized by very high radiation-induced losses (up to a few dB m À1 after kGy dose levels) located in the infrared range of the spectrum. These losses were attributed to the presence of two overlapping absorption bands peaked around 1030 nm (%1.2 eV) and 1330 nm (%0.9 eV),

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“…Al-doped fibers represent a different case; these fibers are more radiation sensitive, but the RIA features a certain amount of recovery [117] that has to be considered for applications. Furthermore, the specific defects that originate the RIA in the near infrared domain, where the sensor should operate, are still unknown [9,119].…”

Section: Advantages and Disadvantages Of The Radiation-induced Attenumentioning

confidence: 99%

The Relevance of Point Defects in Studying Silica-Based Materials from Bulk to Nanosystems

et al. 2019

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The macroscopic properties of silica can be modified by the presence of local microscopic modifications at the scale of the basic molecular units (point defects). Such defects can be generated during the production of glass, devices, or by the environments where the latter have to operate, impacting on the devices’ performance. For these reasons, the identification of defects, their generation processes, and the knowledge of their electrical and optical features are relevant for microelectronics and optoelectronics. The aim of this manuscript is to report some examples of how defects can be generated, how they can impact device performance, and how a defect species or a physical phenomenon that is a disadvantage in some fields can be used as an advantage in others.

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Radiation Effects on Aluminosilicate Optical Fibers: Spectral Investigations From the Ultraviolet to Near‐Infrared Domains

Cited by 13 publications

References 15 publications

Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers

Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers

Photobleaching Effect on the Radiation‐Induced Attenuation of an Ultralow Loss Optical Fiber at Telecommunication Wavelengths

The Relevance of Point Defects in Studying Silica-Based Materials from Bulk to Nanosystems

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