Radiation effects of electron-beam metal depositions on IGFET’s

Abstract

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Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality

“…The exact generation of the damage at the interface was not investigated in this article, if it is only the bombardment by different species during metal deposition, as suggested in literature, [24][25][26][28][29][30] or if it is the induced temperature during the metal deposition. Nevertheless, the just described factors should have an influence on the absolute values, especially if -4,0x10 12 -2,0x10 12 0,0 2,0x10 12 4,0x10 12 6,0x10 12 different metal contacts are used, as they should depend on the deposition parameters needed, such as power or pressure.…”

“…Based on the above, it is generally known that the damage introduced by the described metallization methods is different; however, investigations on their effect on D it and Q tot are rather limited, as deep-level transient spectroscopy (DLTS) and electron-beam-induced current (EBIC) techniques are used to determine the nature of the defects and their influence on recombination. [24,[26][27][28][29][30][31] Despite the possible damage to the underlying layers, metal layers can also be used to improve interface quality. A known and widely used method to reduce the defect density at the oxide-silicon interface, when using aluminum (Al) as metal contact, is to perform a postdeposition anneal after the Al deposition.…”

“…[ 24–27 ] In e ‐beam evaporation, low‐energy X‐rays from the electrons evaporating the source material introduce defects in the metal – dielectric – semiconductor stack. [ 28–30 ] In comparison, thermal evaporation is considered as the softest PVD method for depositing metal contacts on oxide – semiconductor structures. Based on the above, it is generally known that the damage introduced by the described metallization methods is different; however, investigations on their effect on and are rather limited, as deep‐level transient spectroscopy (DLTS) and electron‐beam‐induced current (EBIC) techniques are used to determine the nature of the defects and their influence on recombination.…”

“…Based on the above, it is generally known that the damage introduced by the described metallization methods is different; however, investigations on their effect on and are rather limited, as deep‐level transient spectroscopy (DLTS) and electron‐beam‐induced current (EBIC) techniques are used to determine the nature of the defects and their influence on recombination. [ 24,26–31 ]…”

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

“…[1][2][3] Especially in the field of semiconductor technology, it is well documented that radiation emitted by an e-beam evaporator can induce defects in the semiconductor material. [4][5][6][7][8] Possible side-effects of e-beam evaporation on other aspects of micro-and nanofabrication, e.g., lift-off problems of resist defined patterns, 9,10 are far less reported. Therefore, in this article we first give an overview on different types of radiation that are emitted during e-beam evaporation and how the amount of radiation depends on different deposition parameters and conditions (section II).…”