Radiation effects in SnO<sub>2</sub>–Si sensor structures

Golovanov, V.; Khirunenko, Lyudmila I.; Kiv, A.; Fuks, David; Soshin, M.; Korotchenkov, G. S.

doi:10.1080/10420150500493501

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…Optical properties of the perovskite, Spiro-OMeTAD and SnO 2 functional layers remain unchanged under proton irradiation with the accumulated fluence up to 10 13 protons cm −2 . [16,45] Therefore, the photogeneration rate within the photodiode device is not effected by proton irradiation. This statement is supported by the same saturation photocurrent for the reference and irradiated devices at reverse bias (see Figure S3, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Solovan

Mostovyi

Aidarkhanov

et al. 2023

Advanced Optical Materials

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In principle, they convert optical electromagnetic signals into electrical signals and reveal a linear dependence of the photocurrent on the light intensity.Currently, perovskite photodiodes based on various new synthesized materials have been developed, which in terms of responsivity and detectivity to incident light are close to commercially available photo diodes. [8][9][10][11] Radiation resistance of perovskite solar cells has attracted much attention recently and it was tested in a wide range of proton energies from 150 keV up to 68 MeV with accumulated fluences up to 10 14 protons cm −2 . [12][13][14][15][16] Interestingly the radiation resistance of hybrid perovskite materials vastly surpasses that of well-established elementary semiconductors Ge, Si, and even outperforms the relatively radiation resistant inorganic compound semiconductors such as GaAs and CdTe. [12,13,17,18] This indicates that optoelectronic and photovoltaic devices based on perovskite materials have huge potential for application in the space industry and radioactively contaminated terrestrial regions.So far, only Xiong et al. [19] reported on radiation hardness of perovskite photodiodes based on conventional low-stability methyl ammonium lead iodide CH 3 NH 3 PbI 3 perovskite active This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs 0.04 Rb 0.04 (FA 0.65 MA 0.35 ) 0.92 Pb(I 0.85 Br 0.14 Cl 0.01 ) 3 perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 10 13 protons cm −2 . The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 10 12 protons cm −2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 10 13 protons cm −2 deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.

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Section: Resultsmentioning

confidence: 99%

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Solovan

Mostovyi

Aidarkhanov

et al. 2023

Advanced Optical Materials

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“…The transport layer materials include the SnO 2 electron transport layer (ETL) and Spiro-OMeTAD hole transport layer (HTL). SnO 2 is considered to have excellent thermal stability and irradiation resistance because of its inorganic nature, , and thus the performance changes of Spiro-OMeTAD after different fluences of irradiation were mainly investigated.…”

Section: Resultsmentioning

confidence: 99%

Correlation between Structural Evolution and Device Performance of CH₃NH₃PbI₃ Solar Cells under Proton Irradiation

Luo

et al. 2021

ACS Appl. Energy Mater.

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Organic−inorganic hybrid perovskite has gained enormous attention due to its potential applications in next-generation space solar cells. Although the influence of particle irradiation on perovskite materials and devices has been studied, the correlation between the structural evolution of materials and device performance under irradiation deserves to be further clarified. Herein, the relationship between the structural damage and performance degradation of CH 3 NH 3 PbI 3 (MAPbI 3 ) solar cells under 50 keV proton irradiation up to 1 × 10 15 p cm −2 has been revealed by means of comprehensive experimental characterization and defect simulation. MAPbI 3 films and solar cells exhibited excellent tolerance to proton irradiation up to 1 × 10 14 p cm −2 . In contrast, due to the partial amorphization caused by the degradation of organic groups at a higher proton fluence of 1 × 10 15 p cm −2 , the photoluminescence spectrum of MAPbI 3 films quenched, the carrier lifetime shortened from 57.8 to 17.6 ns, and the density of trap states increased from 8.32 × 10 15 to 1.69 × 10 16 cm −3 . Coupled with the deactivation of the hole transport layer, MAPbI 3 -based solar cells become inoperative under high irradiation greater than 1 × 10 14 p cm −2 . In addition, the photovoltaic performance of solar cells showed a noticeable recovery phenomenon when the fluence was no more than 1 × 10 14 p cm −2 , which was attributed to the imbalance between irradiation-induced defect generation at a high incident rate and defect recombination at different locations. Our results predict that, compared to accelerated simulation experiments on the ground, perovskite materials served in actual space environments at the same fluence have better resistance to proton irradiation due to a low injection rate, thus proving their application prospect in space solar cells.

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“…Besides TiO x , dielectric metal oxides such as HfO 2 and TaO x have also been gaining attention due to their excellent switching properties, high compatibility with CMOS technologies, self-compliance, and self-rectifying behaviour, benefiting crossbar arrays 21 , 22 , 24 , 25 . However, semiconducting metal oxide such as SnO x received lesser attention, albeit it is abundant, low cost, exhibits excellent electronic transport properties and can be employed as transparent conducting oxide 26 – 28 . Additionally, the n-type semiconducting nature of SnO x attributed to the oxygen vacancies and its displacement resistance property (lower chance of single or multi-bit event upset) due to its high Frenkel defect energy (7 eV) can make tin-based oxide highly sought-out switching material for RRAM devices 10 , 28 .…”

Section: Introductionmentioning

confidence: 99%

“…However, semiconducting metal oxide such as SnO x received lesser attention, albeit it is abundant, low cost, exhibits excellent electronic transport properties and can be employed as transparent conducting oxide 26 – 28 . Additionally, the n-type semiconducting nature of SnO x attributed to the oxygen vacancies and its displacement resistance property (lower chance of single or multi-bit event upset) due to its high Frenkel defect energy (7 eV) can make tin-based oxide highly sought-out switching material for RRAM devices 10 , 28 .…”

Section: Introductionmentioning

confidence: 99%

Compliance-free, analog RRAM devices based on SnOx

Garlapati,

Simanjuntak,

Stathopoulos

et al. 2024

Sci Rep

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Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly investigated as resistive switching (RS) materials. Among different oxides, tin oxide (SnOx) received minimal attention, although it possesses excellent electronic properties. Herein, we demonstrate compliance-free, analog resistive switching behavior with several stable states in Ti/Pt/SnOx/Pt RRAM devices. The compliance-free nature might be due to the high internal resistance of SnOx films. The resistance of the films was modulated by varying Ar/O2 ratio during the sputtering process. The I–V characteristics revealed a well-expressed high resistance state (HRS) and low resistance states (LRS) with bipolar memristive switching mechanism. By varying the pulse amplitude and width, different resistance states have been achieved, indicating the analog switching characteristics of the device. Furthermore, the devices show excellent retention for eleven states over 1000 s with an endurance of > 100 cycles.

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Radiation effects in SnO₂–Si sensor structures

Cited by 5 publications

References 11 publications

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Correlation between Structural Evolution and Device Performance of CH₃NH₃PbI₃ Solar Cells under Proton Irradiation

Compliance-free, analog RRAM devices based on SnOx

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Radiation effects in SnO2–Si sensor structures

Cited by 5 publications

References 11 publications

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

Correlation between Structural Evolution and Device Performance of CH3NH3PbI3 Solar Cells under Proton Irradiation

Compliance-free, analog RRAM devices based on SnOx

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Product

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Radiation effects in SnO₂–Si sensor structures

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Extreme Radiation Resistance of Self‐Powered High‐Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Correlation between Structural Evolution and Device Performance of CH₃NH₃PbI₃ Solar Cells under Proton Irradiation