Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study

Kaushal, Gaurav; Rathod, Surendra S.; Maheshwaram, Satish; Manhas, S. K.; Saxena, Ashok Kumar; Dasgupta, S.

doi:10.1109/ted.2012.2187656

Cited by 29 publications

(10 citation statements)

References 9 publications

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“…The variable r is the perpendicular radius distance from the ion track and the variable t is the time, while r 0 and w 0 are the characteristic values of the Gaussian function. The ion strike is modeled using Gaussian radial distribution with 10 nm characteristics radius [17], Gaussian time distribution is set to center at 20 ps with characteristics width of 2 ps [15], [31]. The next step is the observation of transient drain current; the transition of e-h pairs in the sensitive volume of the device forms the transient current pulse.…”

Section: B Heavy-ion Simulationmentioning

confidence: 99%

“…The impact of heavy-ions on SOI devices is also observed in [14] and [15] by calculating drain collected charges. The study is done through transient response for SEE in SOI like bulk MOSFET [16] and in Si-nanowire FET [17]. In [17], the considered device heavy-ion incident is taken at the channel/drain junction, and the detrimental impact is observed on CMOS inverter characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…The study is done through transient response for SEE in SOI like bulk MOSFET [16] and in Si-nanowire FET [17]. In [17], the considered device heavy-ion incident is taken at the channel/drain junction, and the detrimental impact is observed on CMOS inverter characteristics. In [18], the single event of multiple transient structures is proposed to analyze the impact of heavy-ions, and their result shows that the charge sharing can impact three transistors at most.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

et al. 2022

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The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient (SET) pulse of current. In this work, the analysis was done to observe the maximum impact of heavy-ions on a calibrated double-gate tunnel field-effect transistor (DG-TFET) taken as a device under test (DUT). The impact of heavy-ions on DG-TFET is compared with the previous work done for different TFETs. The ions are directed to strike vertically at five different positions; source, source-body junction, body, drainbody junction, and the drain region of DG-TFET. The analysis is done by observing the heavy-ion generation rate, heavy-ion charge density, and transient current for the strike of the ion at different locations on the DUT and at different linear energy transfer (LET) values with the help of physics-based numerical simulation. In the study, a detailed analysis of the transient current due to a heavy-ion strike in the body region is reported, and this transient current is compared with the existing reported data for different FETs. Bipolar gain of the device is also observed for a heavy-ion strike in the body region, which is an important parameter for analyzing SEE. The findings in this study can give a new insight into SEE in TFET devices and can also provide guidelines for radiation-hardened applications for TFET-based circuits.

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Section: B Heavy-ion Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

et al. 2022

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“…In the last decade a quick and inventive development has been seen in the electronics systems of the satellite. The basic requirement of these electronics systems are low power consumption, less heat dissipation and good noise tolerance capability [1,2]. These requirements have been fulfilled by the short-channel multigate devices.…”

Section: Introductionmentioning

confidence: 99%

Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate

Ray,

Naugarhiya,

Mishra

2024

Phys. Scr.

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The total ionizing dose (TID) effect of modulated gate workfunction (MGW) FinFET based CMOS inverter is designed and analyzed. The post radiation analysis of the voltage transfer characteristics, noise margin and propagation delay are demonstrated. The incorporation workfunction modulation engineering enhances the OFF-state performance, and maintains positive threshold voltage for both the pre and post radiation condition. 2-decade improvement is noticed for the both n-FinFET and p-FinFET. In addition the proposed technique offers minimum propagation delay time and acceptable noise margin range even after 2000 krad of radiation dose. The analysis and comparison of the results is done by the 3-D TCAD simulator.

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“…Abundant literatures on SET effect are available for MOSFETs and MOSFET-based circuits. [15][16][17][18] Recently, research about SET effect in TFET has been studied. Manohari et al [19] evaluated the SET of three types TFET, including traditional planar TFET, pocket-based planar TFET and LTFET.…”

Section: Introductionmentioning

confidence: 99%

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

et al. 2022

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In this paper, the single event transient (SET) effect in nanotube tunneling field-effect transistor with bias-induced electron-hole bilayer (EHBNT-TFET) is investigated by 3-D TCAD simulation for the first time. The effects of linear energy transfer (LET), characteristic radius, strike angle, electrode bias and hit location on SET response are evaluated in detail. The simulation results show that the peak value of transient drain current is up to 0.08 mA for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 MeV·cm2/mg, which is much higher than ON-state current of EHBNT-TFET. The SET response of EHBNT-TFET presents an obvious dependence on LET, strike angle, drain bias and hit location. As LET increases from 2 MeV·cm2/mg to 10 MeV·cm2/mg, the peak drain current increases monotonically from 0.015 mA to 0.08 mA. The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius. The peak drain current and collected charge increases 0.014 mA and 0.06 fC respectively as drain bias ranges from 0.1 V to 0.9 V. Whether from horizontal or vertical direction, the most sensitive hit location is related to w t . The underlying physical mechanism is explored and discussed.

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Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study

Cited by 29 publications

References 9 publications

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

Investigation of Single-Event-Transient Effects Induced by Heavy-Ion in All-Silicon DG-TFET

Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate

Single-event-transient effect in nanotube tunnel field-effect transistor with bias-induced electron-hole bilayer

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