Radiation effects in a CMOS active pixel sensor

Hopkinson, G.R.

doi:10.1109/23.903796

Cited by 111 publications

(70 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The gamma flux is apparent as a uniform noise across the whole sensor. As the irradiation progresses, it becomes apparent that the signal in the centre of the imaging area is increasing at a greater rate than that in the border of the imaging area, as the uniform gamma flux becomes more and more non-uniform, a similar effect is seen in some STAR-250 irradiations [8] . As the dose approaches 120 krad(Si), the device becomes completely saturated over the whole device.…”

Section: Dosimetrymentioning

confidence: 68%

Gamma radiation damage study of 0.18 Âµm process CMOS image sensors

et al. 2010

View full text Add to dashboard Cite

A 0.18 μm process CMOS image sensor has recently been developed by e2v technologies plc. with a 0.5 megapixel imaging area consisting of 6 × 6 μm 5T pixels. The sensor is able to provide high performance in a diverse range of applications including machine vision and medical imaging, offering good low-light performance at a video rate of up to 60 fps. The CMOS sensor has desirable characteristics which make it appealing for a number of space applications. Following on from previous tests of the radiation hardness of the image sensors to proton radiation, in which the increase in dark-current and appearance of bright and RTS pixels was quantified, the sensors have now been subjected to a dose of gamma radiation. Knowledge of the performance after irradiation is important to judge suitability for space applications and radiation sensitive medical imaging applications. This knowledge will also enable image correction to mitigate the effects and allow for future CMOS devices to be designed to improve upon the findings in this paper. One device was irradiated to destruction after 120 krad(Si) while biased, and four other devices were irradiated between 5 and 20 krad(Si) while biased. This paper explores the resulting radiation damage effects on the CMOS image sensor such as increased dark current, and a central brightening effect, and discusses the implications for use of the sensor in space applications.

show abstract

Section: Dosimetrymentioning

confidence: 68%

Gamma radiation damage study of 0.18 Âµm process CMOS image sensors

et al. 2010

View full text Add to dashboard Cite

show abstract

“…Recent studies have focused on CMOS Sensors (Fig.12) and CCDs. Sensitivity to bulk ionizing damage is limited and has not been thoroughly investigated except for charged particles (Hopkinson, 2000). The striking result is the limited Fixed Pattern Noise increase due to ionizing irradiation, which is much less pronounced than it is when induced by displacement damage.…”

Section: Total Dose and Dose Rate Effects; Silicon Detectorsmentioning

confidence: 99%

Total Dose and Dose Rate Effects on Some Current Semiconducting Devices

Fourches¹

2012

Current Topics in Ionizing Radiation Research

View full text Add to dashboard Cite

“…For instance, Thin Film on ASIC (TFA) technology [20][21][22][23][24] and Complementary Active Pixel Sensors (CAPS) [25][26][27][28][29][30][31]. Finally, some studies have been carried out to study the radiation effects and how radiation induced dark current in APS [32][33][34][35][36][37][38][39] and the effect of hot carriers [40]. In addition, it is well known that heavy metals such as Cu, Ni, Fe or Zn, which appear in some CMOS image sensor processes, can cause defects in silicon and influence gate oxide quality in VLSI circuits.…”

Section: After 1997mentioning

confidence: 99%

“…Moreover, CMOS imagers are known to be tolerant to radiation, although true radiation tolerance can only be obtained using specific methods. Thus, there is a huge interest in radiation-tolerant imaging systems [32][33][34][35][36][37][38][39]135,136] …”

Section: Space Applicationsmentioning

confidence: 99%

Review of CMOS image sensors

Bigas

Cabruja

Salví

2006

Microelectronics Journal

484

230

View full text Add to dashboard Cite

The role of CMOS Image Sensors since their birth around the 1960s, has been changing a lot. Unlike the past, current CMOS Image Sensors are becoming competitive with regard to Charged Couple Device (CCD) technology. They offer many advantages with respect to CCD, such as lower power consumption, lower voltage operation, on-chip functionality and lower cost. Nevertheless, they are still too noisy and less sensitive than CCDs.Noise and sensitivity are the key-factors to compete with industrial and scientific CCDs. It must be pointed out also that there are several kinds of CMOS Image sensors, each of them to satisfy the huge demand in different areas, such as Digital photography, industrial vision, medical and space applications, electrostatic sensing, automotive, instrumentation and 3D vision systems.In the wake of that, a lot of research has been carried out, focusing on problems to be solved such as sensitivity, noise, power consumption, voltage operation, speed imaging and dynamic range. In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations. In conclusion, the State-of-the-art of CMOS Image Sensors. q

show abstract

Radiation effects in a CMOS active pixel sensor

Cited by 111 publications

References 11 publications

Gamma radiation damage study of 0.18 Âµm process CMOS image sensors

Gamma radiation damage study of 0.18 Âµm process CMOS image sensors

Total Dose and Dose Rate Effects on Some Current Semiconducting Devices

Review of CMOS image sensors

Contact Info

Product

Resources

About