Radiation Effect Test for Single-Crystalline and Polycrystalline Silicon Solar Cells

Shin, Goo-Hwan; Ryu, Kwang‐Sun; Kim, Hyung-Myung; Min, Kyoung‐Wook

doi:10.3938/jkps.52.843

Cited by 9 publications

(6 citation statements)

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“…The highly energetic particles interacting with solar cells induce defects in the semiconductor lattice and, consequently, deteriorate the solar cell performance [3]. The performance degradation of solar cells subjected to energetic electrons and protons in laboratories is well characterized [4][5][6][7][8][9]. It was observed that the space solar figures of merit (the short circuit current , the open circuit voltage , the maximum output power , the fill factor and the conversion efficiency ) decrease linearly with the logarithm of the fluence.…”

Section: Introductionmentioning

confidence: 87%

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Hamache

Sengouga

Meftah

et al. 2016

Radiation Physics and Chemistry

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The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk (DA) and/or generation-recombination centers (GRC), it was found that, only one of them (the shallowest donor) is responsible for the anomalous degradation of . It will be also shown, by calculating the free charge carrier profile in the active region, that this behavior is not related to type conversion but to a widening of the space charge region.

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Section: Introductionmentioning

confidence: 87%

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Hamache

Sengouga

Meftah

et al. 2016

Radiation Physics and Chemistry

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“…Also, on determining phenomenological parameters i.e. excess minority carrier recombination velocity [10] at the junction and back surfaces, mobility, lifetime [11] and diffusion length [12] [13], charged particles irradiation effects were pointed out.…”

Section: Introductionmentioning

confidence: 99%

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Ba¹,

Thiam²,

Thiame³

et al. 2019

JEMAA

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In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (p φ) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

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“…In this experiment, the three DAC-7512E serial conversion devices were used for verification of TID effects. The DAC-7512E is fabricated using a complementary metal oxide semiconductor (CMOS) process [7,8]. The architecture consists of a string DAC followed by an output buffer amplifier [9][10][11][12][13].…”

Section: Test Results and Discussionmentioning

confidence: 99%

Co⁶⁰Gamma-Ray Effects on the DAC-7512E 12-Bit Serial Digital to Analog Converter for Space Power Applications

Shin¹

2014

Journal of Electrical Engineering and Technology

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-The DAC-7512E is a 12-bit digital to analog converter that is low power and a single package with internal buffers. The DAC-7512E takes up minimal PCB area for applications of space power electronics design. The spacecraft mass is a crucial point considering spacecraft launch into space. Therefore, we have performed a TID test for the DAC-7512E 12-bit serial input digital to analog converter to reduce the spacecraft mass by using a low-level Gamma-ray irradiator with Co 60 gamma-ray sources. The irradiation with Co 60 gamma-rays was carried out at doses from 0 krad to 100 krad to check the error status of the device in terms of current, voltage and bit error status during conversion. The DAC-7512E 12-bit serial digital to analog converter should work properly from 0 krad to 30 krad without any error.

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Radiation Effect Test for Single-Crystalline and Polycrystalline Silicon Solar Cells

Cited by 9 publications

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Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Co⁶⁰Gamma-Ray Effects on the DAC-7512E 12-Bit Serial Digital to Analog Converter for Space Power Applications

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Radiation Effect Test for Single-Crystalline and Polycrystalline Silicon Solar Cells

Cited by 9 publications

References 0 publications

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Modeling the effect of 1MeV electron irradiation on the performance of n+–p–p+ silicon space solar cells

Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Co60Gamma-Ray Effects on the DAC-7512E 12-Bit Serial Digital to Analog Converter for Space Power Applications

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Product

Resources

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Co⁶⁰Gamma-Ray Effects on the DAC-7512E 12-Bit Serial Digital to Analog Converter for Space Power Applications