Radiation damage of SiC Schottky diodes by electron irradiation

Radiation source dependence of device performance degradation for 4H-SiC MESFETs

“…The activation energy Ea for the recovery of the drain and base current for 10 6 Gy γ -rays is found to be 0.40 eV [7]. It is concluded that the degradation of the drain current is mainly sensitive to the radiation-induced interface-state formation [8]. On the other hand, the recovery of capacitance and induced deep level do not occur by 200 • C annealing.…”

“…When one assumes that the recovery process is a first order reaction, the activation energy of recovery is calculated to be 0.31 eV. This value for the interface recombination-related drain current is typical for the annealing of the interface region [8]. The higher value for the drain current could be attributed to a combination of interface-state and oxide-trapped charge annealing.…”

“…The origin of level E 1 is not sure at present. It is believed that the decrease in carrier density is partly caused by the contribution of a non-observed electron capture level in the DLTS spectrum, which compensates the free carriers [8].…”

The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

“…Therefore, over the last decade, many papers have presented their experimental results and theoretical analysis of electron radiation effects, especially on selfgrown 4H-SiC Schottky diodes. Only a few researchers such as Ohyama et al [5] reported on the electron radiation effects of commercial 4H-SiC Schottky diodes. In this paper, the effects of electron radiation on current-voltage (I−V ), and temperature dependence current-voltage (I−V −T ), characteristics of commercial 4H-SiC Schottky diodes were investigated.…”

Effect of metal electrode on characteristics of gamma-irradiated silicon carbide detector

“…The radiation-damage effect on SiC detector has also been a key issue in the research because it is directly related to detector lifetime and also to determinations of optimal detection position. Radiation-damage effects on SiC detector have been studied in considerable breadth and depth [10][11][12][13]. Nava et al [10] observed the change in properties of an SiC detector with various irradiations.…”