Superlattices and Microstructures volume 40, issue 4-6, P632-637 2006 DOI: 10.1016/j.spmi.2006.09.009 View full text
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H. Ohyama, K. Takakura, K. Uemura, K. Shigaki, T. Kudou, T. Matsumoto, M. Arai, S. Kuboyama, C. Kamezawa, E. Simoen, C. Claeys

Abstract: The impact of radiation source dependence on the device performance degradation of 4H-SiC MESFETs (Metal Schottky Field Effect Transistors), which have been irradiated at room temperature with 2 MeV electrons and 20 MeV protons, is studied. No performance degradation is observed by 1 × 10 15 e/cm 2 and 5 × 10 11 p/cm 2 , while a slight increase of the linear drain current together with a decrease of the threshold voltage are noticed above higher fluence. The damage coefficient for protons is about three order…

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