Radiation damage in silicon detectors

Borchi, E.; Bruzzi, M.

doi:10.1007/bf02724516

Cited by 41 publications

(26 citation statements)

References 79 publications

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“…The recovery of the dark current can be described [5] as a sum of exponentials, each exponential being attributed to the recovery of one defect with its proper recovery-time i and its weight g i . Figure 2 shows the recovery of the dark current of an APD irradiated to 1.410 12 n/cm 2 .…”

Section: Annealing Studiesmentioning

confidence: 99%

Radiation damage effect on avalanche photodiodes

Baccaro

Bateman

Cavallari

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4 T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

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Section: Annealing Studiesmentioning

confidence: 99%

Radiation damage effect on avalanche photodiodes

Baccaro

Bateman

Cavallari

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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“…We define λ as the mean path of an electron/hole pair before trapping. From literature [8] the dependence of λ on the fluence φ is known as…”

Section: Radiation Dependent Distributionmentioning

confidence: 99%

Pulse height distribution and radiation tolerance of CVD diamond detectors

Adam

Berdermann

Bergonzo

et al. 2000

Nuclear Instruments and Methods in Physics Research Section A:

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“…Commonly observed defect levels in Fz, Cz (Czochralski) and MCz silicon including those after irradiations can be found in Table 9 at pages 155-157 of [Vavilov and Ukhin (1977)] and also in [Konozenko, Semenyuk and Khivrich (1969);Milnes (1973);Walker and Sah (1973); Borchi et al (1989); Li et al (1992); Borchi and Bruzzi (1994); Bosetti et al (1995);Levinshtein, Rumyantsev and Shur (2000); Lutz (2001); Claeys and Simoen (2002)] (see also references therein); typical experimental errors for energy levels of defects are about (0.5-2.5) meV (e.g., see [Walker and Sah (1973);Jellison (1982); Li et al (1992); Bosetti et al (1995)] and Table 4.4).…”

Section: ])mentioning

confidence: 99%

“…Under the assumption of a spherical cluster, the core region of radius Tc ~ (10-25) nm (e.g., [Borchi and Bruzzi (1994); Gossick (1959); Gregory (1969)] and references therein) is surrounded by a semiconductor volume of radius Ts from which majority-carriers have been partially removed generating a region similar to that depleted in a p-n junction with a potential hill (well) for majority (minority) carriers. The outer boundary must exceed the Debye-Hiickel length (LDH) in the undisturbed lattice:…”

Section: ])mentioning

confidence: 99%

Radiation Environments and Damage in Silicon Semiconductors

2011

Principles of Radiation Interaction in Matter and Detection

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InSilicon is the active material of radiation detectors and the basic material of electronic devices used in the fabrication and development of electronic circuits. The present technology evolves toward the creation of faster and less power consuming devices of increasingly small sensitive volume and higher density circuits, achieving, now, sub-micron technology with an increase of the number of memory elements. These devices are then used for applications of large to very large scale integration (VLSI) in several fields including particle physics experiments, reactor physics, nuclear medicine and space. Many fields of application present adverse radiation environments that may affect the operation of the devices. These radiation environments are described in Sect. 4.1. These environments are generated by i) the operation of the high-luminosity machines for particles physics experiments, an example is the Large Hadron Collider (LHC) , ii) the cosmic rays and trapped particles of various origins in interplanetary space and/or Earth magnetosphere and iii) the operation of nuclear reactors. Their potential threats to the devices operation, in terms of damage by displacement (radiation-induced damage), are also described in that section. A review of the characteristics of space, high-energy and nuclear radiation environments and of physical processes inducing damages in silicon semiconductor operated in radiation environments was provided by Leroy and Rancoita (2007).The generation and type of damage are linked to processes of energy deposition. The interaction of incoming particles with matter results into two major effects: the collision energy-loss and atomic displacement, which are treated in the chapter on Electromagnetic Interaction of Radiation in Matter. Interactions of incoming particles, which result in the excitation or emission of atomic electrons, are referred to as energy-loss by ionization or energy-loss by collisions. The non-ionization energy-loss (NIEL) processes are interactions in which the energy imparted by the incoming particle results in atomic displacements or in collisions, where the knock-on atom does not move from its lattice location and the energy is dissipated in lattice vibrations. The energy deposition by non-ionization processes is much lower (except for neutrons) than that by ionization. However, bulk-damage phenomena result mostly from atomic displacement deposition-mechanisms, the so-325 Principles of Radiation Interaction in Matter and Detection Downloaded from www.worldscientific.com by DEAKIN UNIVERSITY on 10/12/15. For personal use only. Principles of Radiation Interaction in Matter and Detection Downloaded from www.worldscientific.com by DEAKIN UNIVERSITY on 10/12/15. For personal use only. Radiation Environments and Damage in Silicon Semiconductors 327ing the main modifications of silicon radiation-detectors and devices after irradiations. These latter are discussed in Sect. 6.8 and Chapter 7, respectively. Finally, it has to be remarked that an extended treatment -compleme...

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Radiation damage in silicon detectors

Cited by 41 publications

References 79 publications

Radiation damage effect on avalanche photodiodes

Radiation damage effect on avalanche photodiodes

Pulse height distribution and radiation tolerance of CVD diamond detectors

Radiation Environments and Damage in Silicon Semiconductors

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