Radiation damage in scientific charge-coupled devices

Janesick, James R.; Elliott, Tom; Pool, F. S.

doi:10.1109/23.34503

Cited by 87 publications

(36 citation statements)

References 8 publications

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“…Whereas the dominant trap types in n-channel CCDs are well documented [2,3,5,[11][12][13], less is known about the traps to be expected in p-channel CCDs. A major trap is likely to be the divacancy with an energy around 0.18 eV [14] to 0.21 eV [15] above the valance band , other traps could be related to carbon and oxygen interstitials [16].…”

Section: Introductionmentioning

confidence: 99%

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Comparison of proton irradiated P-channel and N-channel CCDs

Gow

Murray

Holland

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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Charge transfer inefficiency and dark current effects are compared for e2v technologies plc. p-channel and n-channel CCDs, both irradiated with protons. The p-channel devices, prior to their irradiation, exhibited twice the dark current and considerable worse charge transfer inefficiency (CTI) than a typical n-channel. The radiation induced increase in dark current was found to be comparable with n-channel CCDs, and its temperature dependence suggest the divacancy is the dominant source of thermally generated dark current pre and post irradiation. The factor of improvement in tolerance to radiation induced CTI varied by between 15 and 25 for serial CTI and 8 and 3 for parallel CTI, between -70 • C and -110 • C respectively.

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Section: Introductionmentioning

confidence: 99%

“…It has long been established that for charge coupled devices (CCDs) the main source of damage arises from protons within the Earth s radiation belts and cosmic rays [2,3]. Protons cause displacement damage within the silicon lattice, generating stable defects and thereby creating energy levels within the silicon band-gap [4].…”

Section: Introductionmentioning

confidence: 99%

Comparison of proton irradiated P-channel and N-channel CCDs

Gow

Murray

Holland

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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“…High energy particles can displace silicon atoms in the CCD from their original position, causing defects in the lattice structure (Janesick et al 1989). When the charge cloud generated by the absorption of an X-ray photon in silicon is transferred through the CCD image and store sections, the defects can trap a fraction of the original charge.…”

Section: Introductionmentioning

confidence: 99%

RecoveringSwift-XRT energy resolution through CCD charge trap mapping

Pagani

Beardmore

Abbey

et al. 2011

A&A

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The X-ray telescope on board the Swift satellite for gamma-ray burst astronomy has been exposed to the radiation of the space environment since launch in November 2004. Radiation causes damage to the detector, with the generation of dark current and charge trapping sites that result in the degradation of the spectral resolution and an increase of the instrumental background. The Swift team has a dedicated calibration program with the goal of recovering a significant proportion of the lost spectroscopic performance. Calibration observations of supernova remnants with strong emission lines are analysed to map the detector charge traps and to derive position-dependent corrections to the measured photon energies. We have achieved a substantial recovery in the XRT resolution by implementing these corrections in an updated version of the Swift XRT gain file and in corresponding improvements to the Swift XRT HEAsoft software. We provide illustrations of the impact of the enhanced energy resolution, and show that we have recovered most of the spectral resolution lost since launch.

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“…The CCDs used in harsh radiation environments are especially vulnerable to ionizing damage. 1 Ionizing damage in the CCDs induce an increase of the dark signals and the noise, a shift of the flat-band voltage and the threshold voltage, a decrease of the saturation output voltage (V S ) and dynamic range. 2,3 Many studies have emphasized the dose rate effects on bipolar devices.…”

Section: Introductionmentioning

confidence: 99%

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

Wang

Chen

et al. 2015

AIP Advances

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The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (VS) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The VS degradation levels depend on the dose rates. The VS degradation mechanism induced by dose rate and annealing effects is analyzed. The VS at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during 60Co γ radiation. The VS degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.

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Radiation damage in scientific charge-coupled devices

Cited by 87 publications

References 8 publications

Comparison of proton irradiated P-channel and N-channel CCDs

Comparison of proton irradiated P-channel and N-channel CCDs

RecoveringSwift-XRT energy resolution through CCD charge trap mapping

Dose rate effects on array CCDs exposed by Co-60 γ rays induce saturation output degradation and annealing tests

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