Radiation damage in PIN-photodiodes

Wittenburg, K.

doi:10.1016/0168-9002(88)90008-3

Cited by 11 publications

(6 citation statements)

References 10 publications

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“…The photodiode's re sponse de pends on the energy of the ra dio ac tive source [8]. A num ber of in ves tiga tions have dem on strated that the en ergy de pend ence is most pro nounced for en er gies be low 200 keV [9,10]. For that rea son, the PIN photodiodes should be en ergy compensated when used in low en ergy range.…”

Section: Basic Principlesmentioning

confidence: 99%

“…The main fac tors con trib ut ing to the ra di ation in duced dam ages in PIN photodiodes are the absorbed dose and the en ergy of the ra dio ac tive source. If the PIN photodiode is ex posed to high doses and/or high en ergy ra dio ac tive sources, the struc tural damages of the sil i con crys tal line lat tice are in duced, result ing in the in crease of the dark (leak age) cur rent [4,[8][9][10]. In ad di tion, the ra di a tion in duced dam ages lead to the grad ual de crease of the level of ra di a tion induced photocurrent, i. e. de crease of the PIN photodiode's sen si tiv ity.…”

Section: Basic Principlesmentioning

confidence: 99%

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Feasibility study of a current mode gamma radiation dosimeter based on a commercial pin photodiode and a custom made auto-ranging electrometer

Andjelkovic¹,

Ristić²

2013

NUCL TECH RAD PROT

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An experimental study has been conducted to evaluate the feasibility of a current mode gamma radiation dosimeter, consisting of a commercial PIN photodiode as a radiation sensor, and a custom made auto-ranging electrometer for real-time measurement of the PIN photodiode’s response under radiation exposure. The radiation induced direct current response for single PIN photodiodes with different active areas, as well as for multiple PIN photodiodes connected in parallel, has been investigated. Three types of commercial silicon PIN photodiodes have been chosen for evaluation - S1223, BPW34, and PS100-6-CER2 PIN. During the experiment, five samples have been tested - three samples made of single PIN photodiodes (one sample of each photodiode type) and two samples formed by connecting multiple photodiodes in parallel (two BPW34 photodiodes in parallel and four BPW34 photodiodes in parallel). The samples have been irradiated with a 60Co gamma ray source and the relations between the induced photocurrent and the dose rate, and between the accumulated charge and the absorbed dose, have been determined. For measuring the photodiodes response, a custom made auto-ranging electrometer controlled by a personal computer, and capable of measuring direct currents from 50 pA to 10 mA with relative error less than 2.5%, has been used. Obtained results have shown very good linearity between the dose rate and the induced photocurrent for dose rates ranging from 0.93 Gy/h to 67 Gy/h. Also, very good linearity has been observed between the accumulated charge and the absorbed dose for all tested samples, within the investigated range of absorbed doses from 472 mGy to 3.3 Gy. On the basis of the obtained results, a simple model has been derived, enabling the estimation of the photodiode’s current response as a function of the dose rate and the photodiode’s geometry (active area and depletion layer width). [Projekat Ministarstva nauke Republike Srbije, br. 43011

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Section: Basic Principlesmentioning

confidence: 99%

Section: Basic Principlesmentioning

confidence: 99%

Feasibility study of a current mode gamma radiation dosimeter based on a commercial pin photodiode and a custom made auto-ranging electrometer

Andjelkovic¹,

Ristić²

2013

NUCL TECH RAD PROT

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“…This circuit was successfully tested up to 2 ⋅ 10 8 rad (Refs. [4][5][6]. The threshold of the following comparator can be adjusted individually for each channel by potentiometers.…”

Section: The Amplifiermentioning

confidence: 99%

The PIN-Diode Beam Loss Monitor system at HERA

Wittenburg¹

2000

AIP Conference Proceedings

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“…No entanto, a maior restrição ao uso de diodo de Si na dosimetria de elétrons refere-se à queda de sensibilidade com o aumento da dose em consequência dos danos provocados por este tipo de radiação [18,19]. Estes danos comprometem as condições operacionais do diodo devido, principalmente, ao aumento da corrente de fuga e da tensão de depleção total do dispositivo e a redução da eficiência de coleta de carga nos eletrodos do detector [20][21][22][23][24][25][26][27][28][29].…”

Section: Introductionunclassified

Dosimetria de elétrons em processos de irradiação com diodos resistentes a danos de radiação

Santos¹

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À minha orientadora Profa. Dra. Carmen Cecília Bueno (IPEN-CNEN/SP e PUC/SP) pela credibilidade, confiança e amizade. Sem mesmo me conhecer, abriu as portas do seu grupo de pesquisa para que eu fizesse parte e, com paciência, carinho e algumas vezes rigidez, me mostrou como lidar com as dificuldades da pesquisa e também da vida. À Profa. Dra. Josemary Angélica Corrêa Gonçalves (IPEN-CNEN/SP e PUC/SP) pela enorme disponibilidade nos momentos de dificuldade e amizade em todas as situações.

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Radiation damage in PIN-photodiodes

Cited by 11 publications

References 10 publications

Feasibility study of a current mode gamma radiation dosimeter based on a commercial pin photodiode and a custom made auto-ranging electrometer

Feasibility study of a current mode gamma radiation dosimeter based on a commercial pin photodiode and a custom made auto-ranging electrometer

The PIN-Diode Beam Loss Monitor system at HERA

Dosimetria de elétrons em processos de irradiação com diodos resistentes a danos de radiação

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