Radiation Damage in Ge and Si Detected by Carrier Lifetime Changes: Damage Thresholds

Loferski, J. J.; Rappaport, P.

doi:10.1103/physrev.111.432

Cited by 215 publications

(63 citation statements)

References 11 publications

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“…Its values given in the literature range from ∼9 to 35 eV for silicon [40,41,42,43,44,45,46] and for tungsten ∼40 -90 eV [47,48]. A 13 eV displacement threshold energy was adopted in our simulations for amorphous Si, 20 eV for crystalline Si and 60 eV for BCC W as a result of this parameter optimization in our simulations.…”

Section: Resultsmentioning

confidence: 99%

Comparison of molecular dynamics and binary collision approximation simulations for atom displacement analysis

Bukonte

Djurabekova

Samela

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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For the conditions reported here, BCA agrees with MD simulation results at displacements larger than 5Å for amorphous Si, whereas at small displacements a difference between BCA and MD arises due to a material flow component observed in MD simulations but absent from a regular BCA approach due to the algorithm limitations. MD and BCA simulation results for crystalline W are found to be in a good agreement even at small displacements, while in crystalline Si there is some difference due to displacements in amorphous pockets.

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Section: Resultsmentioning

confidence: 99%

Comparison of molecular dynamics and binary collision approximation simulations for atom displacement analysis

Bukonte

Djurabekova

Samela

et al. 2013

Nuclear Instruments and Methods in Physics Research Section B:

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“…Amorphous layers lead to a reduction in contrast as well as local variations in intensity. Although beam damage is unlikely to generate point defects in bulk Ge at 300 keV [16], radiation damage of the more weakly bound surface atoms can still occur, causing roughness or amorphous layers at the surface.…”

Section: (A)mentioning

confidence: 99%

Atomic-Resolution Imaging with a Sub-50-pm Electron Probe

et al. 2009

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Recent advances in aberration-correcting electron optics have made sub-Ångstrom imaging in transmission electron microscopy almost routine in both the broad beam and the scanning probe modes [1][2][3][4]. The desire to further improve the spatial resolution in electron microscopy is driven in large part by the need for increased sensitivity, image contrast [5] and atomic-resolution tomography [6]. In this Letter, we report on utilizing a new generation aberration-corrected microscope to form a highly coherent sub-50 pm electron probe at 300 kV and demonstrate that this probe is capable of resolving the 47 pm dumbbell spacing in a Ge 〈114〉 crystal.In scanning transmission electron microscopy (STEM), the size of the electron probe that is focused onto the specimen ultimately limits the spatial resolution. Apart from mechanical and electrical stability, the size of the probe is determined by the illumination half-angle α, residual coherent axial aberrations, and incoherent broadening due to partial temporal and partial spatial coherence given by the finite energy length and the finite size of the demagnified electron source, respectively.

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“…Since very little damage is seen for E , 1.6 MeV, the implication is that E th . [14], N in GaN (11 eV) [15], Si (13 eV) [16], and even C in diamond (80 eV) [17]. However, as we shall show later, effective values of E d can be much higher if the stable defects are only those which involve multiple atomic displacements, along a chain of atoms.…”

mentioning

confidence: 92%