1979
DOI: 10.1016/0039-6028(79)90340-6
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Radiation damage, defects and surfaces

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Cited by 18 publications
(1 citation statement)
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“…It has been shown both experimentally [35] and theoretically [36] that the displacement threshold for silicon is about 15 to 45 eV and, using Gibbon's approximation [37] we calculate E,, the energy below which the nuclear stopping power begins to dominate the electronic stopping power, as 324 eV. This indicates that a t the end of the range, both types of a-particles will be dominated by nuclear stopping (i.e., momentum transfer to nuclei) and both will have enough energy to cause a displacement.…”
Section: Discussionmentioning
confidence: 99%
“…It has been shown both experimentally [35] and theoretically [36] that the displacement threshold for silicon is about 15 to 45 eV and, using Gibbon's approximation [37] we calculate E,, the energy below which the nuclear stopping power begins to dominate the electronic stopping power, as 324 eV. This indicates that a t the end of the range, both types of a-particles will be dominated by nuclear stopping (i.e., momentum transfer to nuclei) and both will have enough energy to cause a displacement.…”
Section: Discussionmentioning
confidence: 99%