Radiation Damage and Hardening Effects on Compensated GaAs Light-Emitting Diodes

Share, S.; Epstein, A. S.; Polimadei, R. A.

doi:10.1109/tns.1973.4327404

Cited by 13 publications

(6 citation statements)

References 15 publications

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“…At lower voltages, where the applied voltage, V, equals the junction voltage, Vj, the slope of the I-V curves is given by m : 1.7 in exp [qV/mkT] indicating that the total current flow is dominated by space-charge recombination (SCR) at low voltages. This result is often observed in GaAs LED's (1,3,5) as is the irradiation-induced increase in SCR current at constant voltage (6), shown in Fig. 1.…”

Section: Resultsmentioning

confidence: 53%

“…According to Eq. [3], L varies as z2 while, as we have noted, the SCR current is proportional to L/~. Therefore, assuming that the lifetime in the space-charge region is about the same as the lifetime in the p-region, the decrease in L in the SCLC range should approximately equal the square of the increase in I in the SCR range.…”

Section: Analysis and Discussionmentioning

confidence: 79%

“…(V-Vj) 2 In these equations, ~n and/~ are the electron and hole inabilities, respectively, Po is the equilibrium hole density in the p-region, l is the thickness of the pregion, CL and C are constants, and ~a is the radiative lifetime. Equation [3] illustrates the square law variation of L with p-region voltage drop, shown in Fig. 8, and, also, the fact that L varies as the square of the electron lifetime.…”

Section: Analysis and Discussionmentioning

confidence: 99%

“…The amphoterically Si-doped LED's used in this study were obtained from Texas Instruments Incorporated. They are designated as TIL-26 emitters and constitute the emitter portion of the TIL-107 optical isolator studied previously (3). The TIL-26 consists o~ a single epitaxial layer in which the n-and p-type regions are grown by varying the growth temperature over a wide range.…”

Section: Methodsmentioning

confidence: 99%

“…Previous studies in our laboratory (1,2) and elsewhere (3,4) have shown that the GaAs:Si LED's are quite sensitive to irradiation, primarily because of their relatively long preirradiation electron lifetimes. Our examination (2) of the effects of gamma irradiation on the room temperature light output of these devices showed that additional degradation results from the presence of radiative space-charge limited current (SCLC) flow at high currents.…”

mentioning

confidence: 91%

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The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

Barnes¹

1977

J. Electrochem. Soc.

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The effects of gamma irradiation on the light intensity, total current, spectral characteristics, and radiative decay time as a function of applied voltage at 76~ have been studied in amphoterically Si-doped GaAs lightemitting diodes (LED's). At low voltages, both the total current, I, and radiative current are due to space charge recombination with the result that, at constant voltage, I increases with gamma dose, r while the light intensity, L, remains constant. At higher voltages, where the radiative current is due to recombination in the neutral p-region, L decreases sharply with r at constant voltage. This rapid decrease is due, in part, to the presence of space-charge limited current (SCLC) flow which also leads to a decrease in I with r at constant high voltage. Spectral measurements show that the emission peak energy is proportional to junction voltage at low currents suggesting radiative tunneling of carriers in deep tail states. In accordance with the "wavy band" model t'or these diodes, tail states are also responsible for the observed inverse dependence of radiative decay time on diode current and emitted photon energy. The long lifetimes in the localized deep tail states lead to a radiation damage effect contrary to that observed for diffusion length-associated lifetimes; that is, the longest lifetimes are least affected by gamma irradiation.

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