Properties of compensated GaAs light-emitting diodes following 60Co irradiation

Share, S.; Epstein, A. S.; Polimadei, R. A.

doi:10.1016/0038-1101(75)90022-2

Cited by 13 publications

(4 citation statements)

References 17 publications

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“…At lower voltages, where the applied voltage, V, equals the junction voltage, Vj, the slope of the I-V curves is given by m : 1.7 in exp [qV/mkT] indicating that the total current flow is dominated by space-charge recombination (SCR) at low voltages. This result is often observed in GaAs LED's (1,3,5) as is the irradiation-induced increase in SCR current at constant voltage (6), shown in Fig. 1.…”

Section: Resultsmentioning

confidence: 52%

“…This follows from the fact that a significant electron density must be present for there to be a significant light output. The comparison of the radiative and total currents is somewhat analogous to the frequent observation at room temperature of a radiative diffusion current in the presence of a total SCR current (1,3,5,6).…”

Section: Analysis and Discussionmentioning

confidence: 70%

“…[3] indicating that Eq. [5] provides a valid fit to the data. This agreement extends over two orders of magnitude in gamma dose.…”

Section: Analysis and Discussionmentioning

confidence: 99%

“…The macroscopic surface imperfections which are a major problem to the attainment of such surfaces are pits and hillocks. The origin of these defects has been investigated by a number of workers using the Ga/AsC1JH2 (1-4) and Ga/ AsHJHC1 (5)(6)(7)(8)(9)(10)(11) growth systems in relation to growth parameters. It has been reported that the surface morphologies depend strongly on the deposition temperature (4, 10), the gas phase stoichiometry (7,(9)(10)(11), the substrate orientation (1,6), the oxygen contamination of gas stream and the dirt (2, 5), and the substrafe preparation (5).…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

Barnes¹

1977

J. Electrochem. Soc.

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The effects of gamma irradiation on the light intensity, total current, spectral characteristics, and radiative decay time as a function of applied voltage at 76~ have been studied in amphoterically Si-doped GaAs lightemitting diodes (LED's). At low voltages, both the total current, I, and radiative current are due to space charge recombination with the result that, at constant voltage, I increases with gamma dose, r while the light intensity, L, remains constant. At higher voltages, where the radiative current is due to recombination in the neutral p-region, L decreases sharply with r at constant voltage. This rapid decrease is due, in part, to the presence of space-charge limited current (SCLC) flow which also leads to a decrease in I with r at constant high voltage. Spectral measurements show that the emission peak energy is proportional to junction voltage at low currents suggesting radiative tunneling of carriers in deep tail states. In accordance with the "wavy band" model t'or these diodes, tail states are also responsible for the observed inverse dependence of radiative decay time on diode current and emitted photon energy. The long lifetimes in the localized deep tail states lead to a radiation damage effect contrary to that observed for diffusion length-associated lifetimes; that is, the longest lifetimes are least affected by gamma irradiation.

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Section: Resultsmentioning

confidence: 52%

Section: Analysis and Discussionmentioning

confidence: 70%

“…[3] indicating that Eq. [5] provides a valid fit to the data. This agreement extends over two orders of magnitude in gamma dose.…”

Section: Analysis and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

Barnes¹

1977

J. Electrochem. Soc.

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Radiation effects in a photo-coupler with high-energy electrons and γ-rays and recovery by current annealing

Yasuda

Takeda

Masuda

et al. 1985

phys. stat. sol. (a)

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The radiation damage of a photo‐coupler, composed of GaAs LED and Si phototransistor, is studied by irradiation with 7 MeV electrons from a linac and γ‐rays from 60Co. The current transfer ratio (GTE) is measured at room temperature and 77 K. The CTR decreases rapidly over total dose of about 1012 electrons/cm2 for electron irradiation and 103 Gy (Si) for γ‐ray irradiation. Changes of the CTR by irradiation, measured at 77 K, are smaller than those at room temperature. The CTR of the photo‐coupler, irradiated with 2.6 × 104 G‐y (Si), could be recovered to about 50% of the preirradiation value due to current annealing by applying the forward current of 100 mA to the LED in the photo‐coupler for about 100 min.

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Effect of irradiation on the optical, electrophysical, and surface properties of GaAlAs heterostructures

Golodze¹,

Kartsivadze²,

Kurdiani³

et al. 1984

Soviet Physics Journal

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Properties of compensated GaAs light-emitting diodes following 60Co irradiation

Cited by 13 publications

References 17 publications

The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

The Effect of Gamma Irradiation on the Low Temperature Properties of Amphoterically Si‐Doped GaAs LED's

Radiation effects in a photo-coupler with high-energy electrons and γ-rays and recovery by current annealing

Effect of irradiation on the optical, electrophysical, and surface properties of GaAlAs heterostructures

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