Radiation color centers in Y3Al5O12:Cr3+tals

Bagdasarov, Khachik S; Pasternak, L B; Sevast'yanov, B. K.

doi:10.1070/qe1977v007n08abeh012694

Cited by 10 publications

(11 citation statements)

References 2 publications

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“…Clearly, the YAG:Ce spectrum closely resembles the literature curve shown by crosses and circles, with the characteristic tail on the high energy side assigned to the transient color centers as discussed before. Those centers are known to occur in YAG and many other materials although usually they are activated by a much shorter wavelength excitation [7]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…4) the characteristic Ce-related band is situated at the wavelengths almost entirely above the long wavelength limit of the Ce 3 + emission band. On the other hand, the featureless and flat component that actually does overlap the Ce3+ emission band, may well not be intrinsic to Ce and may, instead, originate in various defects characteristic of the YAG host as suggested before [5][6][7]. Since concentrations of defects can be manipulated in many ways (doping with aliovalent ions, annealing in different atmospheres and so on) it may well be that the ESA in the critical range of wavelengths can also be modified and, hopefully, reduced.…”

Section: Introductionmentioning

confidence: 90%

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Excited State Absorption and Thermoluminescence in Ce and Mg Doped Yttrium Aluminum Garnet

et al. 1999

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In this paper we report preliminary results of optical studies on Y3 Al5012 (YAG) crystals codoped with Ce and Mg. By using measurements of luminescence, absorption, and luminescence excitation spectra we demonstrate that although the basic features introduced to the YAG host by the Ce-doping remain intact, the Mg-codoping imposes some significant changes on other properties of the material. These changes are potentially important for laser and/or scintillator applications of YAG:Ce and are due, most likely, to modifications of defect populations in the material. We characterize them by using the techniques of thermoluminescence and excited state absorption under excimer laser pumping. These techniques, interestingly, yield results that seem inconsistent. While the thermoluminescence signal of the Mg-doped sample is strongly reduced, suggesting that trap concentrations in the presence of Mg are suppressed, the excited state absorption signal, which we also relate to the traps, is higher. We offer a tentative explanation of this contradiction between the two experiments that involves a massive transfer of electrons from the Mg-related defects to the excited state absorption centers caused by the excimer pump itself.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 90%

Excited State Absorption and Thermoluminescence in Ce and Mg Doped Yttrium Aluminum Garnet

et al. 1999

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“…Thus, TL measurements provide a reliable method by which to record small luminescence intensities. This makes TL an ideal method for the characterization of trap levels in insulating crystals such as yttrium aluminum garnet (Y 3 Al 5 O 12 ) [44][45][46][47][48][49][50][51][52][53][54][55][56][57][58].…”

Section: Basics Of Tl Processmentioning

confidence: 99%

Trap Level Measurements in Wide Band Gap Materials by Thermoluminescence

Saadatkia¹,

Varney²,

Selim³

2016

Luminescence - An Outlook on the Phenomena and Their Applications

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The electrical and optical properties of wide band gap materials are greatly affected by the presence of defects in the band gap. Identification and characterization of these defects that act as electron and hole traps are essential to understand charge carrier and exciton dynamics and ultimately control the electrical and optical properties of dielectrics and semiconductors. In this chapter, we will demonstrate how thermoluminescence (TL) spectroscopy can be used to characterize traps and measure their energy levels in the band gap. An advanced wavelength-based TL spectrometer will be presented, and its applications for the evaluation of trap levels and the characterization of donors and acceptors in semiconductors and dielectrics will be discussed.

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“…Neutral F-center means that the oxygen vacancy traps two electrons, +1 charged F + -center means that the vacancy trapped one electron and +2 charged F 2+ -center do not trap any electron. The existing of such color centers in oxides will affect the optical and mechanical properties of materials [11][12][13][14][15]. For example, the oxygen vacancy in YAP will trap the electron during the electron transferring and strongly modify/degrade high intrinsic scintillation performance.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, the color center in such Y-Al-O system materials has attracted many research interests [1][2][3][4][5][6][7][8][9][10]. Many experimental methods, including the optical absorption [11,12], photoluminescence (PL) [12,13], thermoluminescence (TL) [14,15], etc., have been used to investigate the rare-earth doped and undoped Y-Al-O system materials. Rich optical absorption and luminescence spectrum have been obtained and some peaks in the spectrum have been attributed to the color centers in these materials.…”

Section: Introductionmentioning

confidence: 99%