We report on the computational study of point defects in the well-known Y3Al5O12 (YAG) compound. DFT SCAN and SCAN+U calculations were used to access the electronic properties of the material taking into account both native defects and two substituting dopants, namely Ce and Cr. Defect formation enthalpies and defect concentrations were estimated for different synthesis conditions corresponding to extreme and intermediate limits of the stability diagram of YAG. We demonstrate that YAl antisites at Al octahedral position cannot be avoided whatever the synthesis atmosphere. As expected, VO oxygen vacancies are easily formed under reducing atmospheres. Moreover, we have notably show that the formal Ce 3+ /Ce 4+ charge transition Computational analysis on native and extrinsic point defects in YAG using the metaG level is getting closer to the experimental value for a Hubbard correction Ueff of 5 eV. Last, the electron traps associated to the reduction of Cr 3+ into Cr 2+ species were identified near the conduction band.