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2011 IEEE Radiation Effects Data Workshop 2011
DOI: 10.1109/redw.2010.6062510
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Radiation Characterization of Microsemi ProASIC3 Flash FPGA Family

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Cited by 22 publications
(9 citation statements)
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“…These FPGAs have been extensively studied by multiple groups to characterize their behavior under radiation and the results of these tests validate their use in the HCAL front-end electronics environment. Of particular value are the extensive studies documented in [44].…”
Section: Front-end Fpgasmentioning
confidence: 99%
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“…These FPGAs have been extensively studied by multiple groups to characterize their behavior under radiation and the results of these tests validate their use in the HCAL front-end electronics environment. Of particular value are the extensive studies documented in [44].…”
Section: Front-end Fpgasmentioning
confidence: 99%
“…According to studies from the manufacturer, SEL have been observed at linear energy transfer (LET) levels of 86.9 MeV cm 2 /mg and higher at room temperature and at an operating temperature of 125 • C [45]; another study [44] has observed SEL at LET levels of 55 MeV cm 2 /mg and higher. The typical LET for nuclear interaction in silicon, by far the most abundant material around the sensitive nodes of the chip, is around 16 MeV cm 2 /mg [46] which is far below the thresholds observed to cause SEL.…”
Section: Front-end Fpgasmentioning
confidence: 99%
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