R.F. reactive sputter deposition of hydrogenated amorphous silicon carbide films

Structural and mechanical properties of amorphous silicon carbonitride films prepared by vapor-transport chemical vapor deposition

“…Obviously, the high atomic percentage of nitrogen incorporated into the a-SiCN:H films as a result of introducing a very small NH 3 /Ar flow ratio is an indication of the effectiveness of NH 3 as a source for nitrogen. 779 cm − 1 , which is due to the stretching vibrations of Si-C bonds [21][22][23] and (ii) the absorption band covering the 2000-2200 cm − 1 region, which is due to Si-H stretching vibrations [24]. On the contrary, no bands of C-H (around 2900 cm − 1 ) [4] or N-H (around 3400 cm − 1 ) [25] were detected in the spectra for samples without nitrogen content.…”

Defect structure of carbon rich a-SiC:H films and the influence of gas and heat treatments

“…The data presented here are qualitatively similar to those presented in a previous article. 3 The bands can be assigned to the following absorption modes: Si-C stretching located at about 780 cm Ϫ1 , 9,22,23 rocking and/or wagging vibrations of CH n in Si-CH n at about 950 cm Ϫ1 , 22,24,25 stretch vibrations for Si-H at 2100 cm Ϫ1 and C-H at 2900 cm Ϫ1 . 22,9 Two additional peaks centered at 1250 and 1350 cm Ϫ1 , present only in hydrogen rich films, 9 can also be attributed to C-H bonds: the absorption bands from 1200 to 1500 cm Ϫ1 are due to bending and scissoring modes of CH 2 , CH 3 , Si͑CH 3 ͒, and C͑CH 3 ͒.…”

A molecular dynamics study of nanoindentation of amorphous silicon carbide

“…Among high performance ceramics, silicon carbide ͑SiC͒ is of particular technological importance for a variety of engineering and optoelectronic device applications. [1][2][3][4] SiC in the amorphous alloy form, a-SiC, has many outstanding physical properties, such as very low coefficient of sliding friction, 5 high hardness, and high wear resistance, which allow for the application of a-SiC as hard surface coatings. 6 Because of its high Young's modulus, [7][8][9] a-SiC is also an excellent material for x-ray lithography mask membrane.…”