R.f. plasma-assisted chemical vapour deposition of diamond-like carbon: physical and mechanical properties

Dekempeneer, E.; Jacobs, R. N.; Smeets, J.; Meneve, J.; Eersels, L.; Blanpain, Bart; Roos, Jozef; Oostra, D.J.

doi:10.1016/0040-6090(92)90605-b

Cited by 81 publications

(34 citation statements)

References 13 publications

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“…This is equivalent with a decrease from 45 to 35 at. % hydrogen which is in agreement with observations by, e.g., Dekempeneer et al 20 Calculation of the proportionality constants is performed by relating the ERDA/RBS to the infrared measurements. It is assumed that no unbonded hydrogen is present in the films as we have no energetic ion bombardment which releases hydrogen via subsurface rearrangement of the growing film.…”

Section: ͑2͒supporting

confidence: 88%

“…For diamondlike a-C:H the hardness is found in the range from 10 to 20 GPa. Dekempeneer et al 20 have presented a maximum value of about 14 GPa several years ago but currently they obtain hardnesses of 20 GPa for a-C:H deposited with an rf parallel-plate reactor. Robertson 4 and Pharr et al 24 report a maximum value of 17 GPa.…”

Section: Resultsmentioning

confidence: 99%

“…The optical band gap is found to be below 1.6 eV and the hydrogen density between 20 and 50% for diamondlike material. 4,20,25 Also the C-C bonding structure is known to be very important: sp 2 bonded carbon sites are responsible for the optical and electronic properties, while sp 3 bonded carbon sites determine the mechanical properties of the material.…”

Section: Resultsmentioning

confidence: 99%

“…Each absorption peak is represented by a Gaussian function which has been proven to give good results 8,20 and is substituted into the transmission formula. The C-H vibrational absorption frequencies around 3000 cm Ϫ1 are given in Table II according to Dischler 21 and Dischler, Bubenzer, and Koidl.…”

Section: Film Analysismentioning

confidence: 99%

“…The best films are those with the highest hardness ͑about 12 GPa͒; they have infrared refractive indices between 1.95 and 2.09. In this table also the diamondlike properties of a-C:H films deposited with other PECVD techniques 4,20,25,[40][41][42] Table I. diamondlike nature. This is surprising as, opposite to the a-C:H material obtained via other PECVD methods, no substrate biasing has been applied.…”

Section: ͑2͒mentioning

confidence: 99%

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Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

Gielen

Kleuskens

Sanden

et al. 1996

Journal of Applied Physics

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Amorphous hydrogenated carbon films have been deposited on crystalline silicon and on glass from an expanding thermal plasma. Two deposition parameters have been varied: the electric current through the plasma source and the admixed acetylene flow. No energetic ion bombardment has been applied during deposition. Ex situ analysis of the films yields the infrared refractive index, hardness, Young's modulus, optical band gap, bonded hydrogen content, and the total hydrogen and mass density. The infrared refractive index describes the film properties independent of which plasma deposition parameter ͑arc current or acetylene flow͒ has been varied. The hardness, Young's modulus, sp 2 /sp 3 ratio, and mass density increase with increasing refractive index. The optical band gap and hydrogen content of the films decrease with increasing refractive index. It is demonstrated that plasma-beam-deposited diamondlike a-C:H has similar properties as material deposited with conventional plasma-enhanced chemical-vapor-depositions techniques under energetic ion bombardment.

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Section: ͑2͒supporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Film Analysismentioning

confidence: 99%

Section: ͑2͒mentioning

confidence: 99%

See 3 more Smart Citations

Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

Gielen

Kleuskens

Sanden

et al. 1996

Journal of Applied Physics

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Influence of bias voltage on the structure and deposition mechanism of diamond‐like carbon films produced by RF (13.56 MHz) CH₄ plasma

Ouchabane

Salah

Herrmann

et al. 2010

Physica Status Solidi (a)

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Plasma enhanced chemical vapour deposition technique (PECVD) was used to grow diamond‐like carbon films using pure methane gas plasma. Structural, optical and mechanical properties of the obtained a‐C:H films were investigated as a function of bias voltage in the range 120–270 V, using different techniques. Elastic recoil detection analysis (ERDA) was employed to determine the hydrogen content and Fourier transform infrared spectroscopy (FTIR) was used to analyse the absorption of optically active hydrogen in the deposited films. The relative concentrations of sp2 and sp3 groups were determined from fitting of both X‐ray photoelectron spectroscopy (XPS) and FTIR spectra. Mechanical hardness and optical transmission were determined using nanoindentation and spectrophotometry, respectively. The results showed that the structure and properties of the films formed strongly depended on the applied bias voltage. In the range of energy considered the growth of the films was governed by a competition between both chemical and physical processes, with a dominance of physical process (subplantation) above 240 V, the energy at which more than 90% sp3 hybridization was obtained. Nanoindentation tests revealed hardness and Young's modulus of the films ranging from 12–15 and 116–155 GPa, respectively. The optical gap values deduced from the optical transmission spectra varied between 1.13 and 1.60 eV.

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Influence of methane flow on the microstructure and properties of TiAl‐doped a‐C:H films deposited by middle frequency reactive magnetron sputtering

Pang

Shi

Wang

et al. 2009

Surface & Interface Analysis

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Hydrogenated TiAl-doped a-C : H films were deposited on Si substrates by middle frequency magnetron sputtering TiAl target in argon and methane gas mixture atmosphere. The surface morphology, hardness, chemical nature and bond types of the films were characterized by means of atomic force microscopy (AFM), XPS, Raman spectroscopy and nanoindentation. The friction and wear behaviors of the deposited films were characterized on an UMT-2MT test system. SEM was utilized to analyze the wear scar and debris on steel balls after sliding on the deposited films under dry friction conditions. The wear rate of the deposited films was calculated from traces of surface profiles taken across the wear track using an optical profile. The results demonstrated that the film deposited at 60 sccm methane flow exhibited higher hardness, as well as low friction coefficient and wear rate, which is attributed to the formation of a graphitized transfer layer.

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R.f. plasma-assisted chemical vapour deposition of diamond-like carbon: physical and mechanical properties

Cited by 81 publications

References 13 publications

Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

Influence of bias voltage on the structure and deposition mechanism of diamond‐like carbon films produced by RF (13.56 MHz) CH₄ plasma

Influence of methane flow on the microstructure and properties of TiAl‐doped a‐C:H films deposited by middle frequency reactive magnetron sputtering

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R.f. plasma-assisted chemical vapour deposition of diamond-like carbon: physical and mechanical properties

Cited by 81 publications

References 13 publications

Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

Influence of bias voltage on the structure and deposition mechanism of diamond‐like carbon films produced by RF (13.56 MHz) CH4 plasma

Influence of methane flow on the microstructure and properties of TiAl‐doped a‐C:H films deposited by middle frequency reactive magnetron sputtering

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Influence of bias voltage on the structure and deposition mechanism of diamond‐like carbon films produced by RF (13.56 MHz) CH₄ plasma