1997
DOI: 10.1063/1.118987
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Quasiphase matched surface emitting second harmonic generation in periodically reversed asymmetric GaAs/AlGaAs quantum well waveguide

Abstract: . (1997). Quasiphase matched surface emitting second harmonic generation in periodically reversed asymmetric GaAs/AlGaAs quantum well waveguide.

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Cited by 15 publications
(17 citation statements)
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“…2 for wavelengths between ϭ1480 and 1600 nm. The SH spectrum from the unimplanted section is similar to that measured previously for the as grown waveguide, 5 except for a slight reduction of the SH exciton resonance relative to the interband background signal. This may be due to a low but finite concentration of nonradiative defects introduced during fabrication.…”
supporting
confidence: 67%
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“…2 for wavelengths between ϭ1480 and 1600 nm. The SH spectrum from the unimplanted section is similar to that measured previously for the as grown waveguide, 5 except for a slight reduction of the SH exciton resonance relative to the interband background signal. This may be due to a low but finite concentration of nonradiative defects introduced during fabrication.…”
supporting
confidence: 67%
“…Although the susceptibility modulation will be smaller [2][3][4][5] than that obtained by crystal domain QPM, 6 patterned quantum well intermixing uses a much simpler fabrication process. The magnitude of (2) in an AQW superlattice [2][3][4][5] is comparable to that of many commonly used nonlinear crystals, and is easily modified using quantum well engineering techniques. Ion implantation enhanced quantum well intermixing is one such technique which has attracted much interest for post-growth fabrication of active and passive optical telecommunication components on a single wafer.…”
mentioning
confidence: 99%
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