2015
DOI: 10.1038/srep14133
|View full text |Cite
|
Sign up to set email alerts
|

Quasi-two-dimensional superconductivity in FeSe0.3Te0.7 thin films and electric-field modulation of superconducting transition

Abstract: We report the structural and superconducting properties of FeSe0.3Te0.7 (FST) thin films with different thicknesses grown on ferroelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrates. It was shown that the FST films undergo biaxial tensile strains which are fully relaxed for films with thicknesses above 200 nm. Electrical transport measurements reveal that the ultrathin films exhibit an insulating behavior and superconductivity appears for thicker films with Tc saturated above 200 nm. The current-voltage curves around… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

5
16
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 32 publications
(21 citation statements)
references
References 43 publications
5
16
0
Order By: Relevance
“…Since a is inversely proportional to the square root of the density of states at the Fermi energy, this behaviour is expected for systems with very small Fermi energy, as found in FeSe 22 . The Cooper-law is commonly used to describe superconducting thin films but the trends observed in our data are in qualitative agreement with those found in thin films of FeSe 12 , thin flakes of FeSe 0.3 Te 0.7 27 and nanoflakes devices of FeSe fabricated using alternate device fabrication techniques 17,20 .…”
Section: Thickness Dependence Of the Transport Behaviour Of Fese Thinsupporting
confidence: 87%
“…Since a is inversely proportional to the square root of the density of states at the Fermi energy, this behaviour is expected for systems with very small Fermi energy, as found in FeSe 22 . The Cooper-law is commonly used to describe superconducting thin films but the trends observed in our data are in qualitative agreement with those found in thin films of FeSe 12 , thin flakes of FeSe 0.3 Te 0.7 27 and nanoflakes devices of FeSe fabricated using alternate device fabrication techniques 17,20 .…”
Section: Thickness Dependence Of the Transport Behaviour Of Fese Thinsupporting
confidence: 87%
“…Instability in the form of the voltage jumps was observed recently in FeSeTe thin film on Pb(MgNb)TiO substrate 11 . Only the current drive was used, so that the S-shaped I-V curved cannot be determined.…”
Section: Comparison With Experiments and Discussionmentioning
confidence: 70%
“…The experimental data of FeSeTe in a current driving setup from ref. 11 are fitted best by the following values of parameters: T c0 = 7 K , k = σ n / σ GL = 0.07 and the fluctuation strength parameter ω = 0.01.
Figure 3The I-V curves of FeSeTe thin film 11 at different temperatures. The points are the experimental data and the solid lines are the theoretical fitting results.
…”
Section: Comparison With Experiments and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The effects of biaxial strain have been frequently explored due to the surprising responses obtained when it comes to properties' modulation, which ranges from induction of dielectric anomalies 19 to bandgap engineering 20 . To control the amount of induced strain, substrates with different mismatches with the films are usually employed 21 . The application of an electric field to a piezoelectric substrate has also been used to induce biaxial strain and modulate specific properties 22 .…”
mentioning
confidence: 99%