Quasi-TEM description of MMIC coplanar lines including conductor-loss effects

Heinrich, W.

doi:10.1109/22.210228

Cited by 292 publications

(198 citation statements)

References 14 publications

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“…Given a closed form for C 0 , then R ac and L int can be calculated analytically as demonstrated in [17]. However, when the R ac and L int are calculated using PEM for the segments using Equations (14) to (23), the PEM values are significantly different than what Q3D predicts.…”

Section: Line Resistance R and Inductance L Calculationsmentioning

confidence: 90%

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Development of an Equivalent Circuit Model of a Finite Ground Coplanar Waveguide Interconnect in Mis System for Ultra-Broadband Monolithic Ics

Ehsan¹,

Zhou²,

2015

PIER C

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Abstract-An equivalent circuit model of a finite ground plane coplanar waveguide (FGCPW) interconnect in a metal-insulator-semiconductor (MIS) system for an ultra-broadband monolithic IC is proposed and illustrated. An effective substrate considering Maxwell-Wagner Polarization is suggested and demonstrated. The method of modeling the weak skin effect of the conductor is presented. The accuracy of the equivalent circuit model is evaluated. This proposed FGCPW interconnect equivalent circuit model enables a quick and efficient time domain simulation to estimate the time delay and bandwidth of ultra-broadband ICs.

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Section: Line Resistance R and Inductance L Calculationsmentioning

confidence: 90%

“…For CPW and FGCPW, analytical solutions for C 0 are derived through conformal mapping in [16,17]. Given a closed form for C 0 , then R ac and L int can be calculated analytically as demonstrated in [17].…”

Section: Line Resistance R and Inductance L Calculationsmentioning

confidence: 99%

Development of an Equivalent Circuit Model of a Finite Ground Coplanar Waveguide Interconnect in Mis System for Ultra-Broadband Monolithic Ics

Ehsan¹,

Zhou²,

2015

PIER C

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“…As expected, this nonreciprocal effect exists only if a perpendicular polarization of the ferrite thin film is applied and if an absorber is located at one coplanar line side. The dimensions of the asymmetrical coplanar line are chosen to keep a quasi-TEM propagation mode [8,9], as S = 72 µm, W 1 = 40 µm, W 2 = 1200 µm, h = 635 µm, physical length 5 mm and 100 µm thickness of graphite. A taper is added for a good matching (50 Ω).…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Simulation Results on a New Non Symmetrical Coplanar Isolator Structure Using Magnetic Thin Film

Kirouane

Verney²,

Vincent³

et al. 2009

PIER Letters

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Abstract-The non reciprocal effect of such devices as microstrip and coplanar isolators can be based on the field displacement phenomenon induced by a magnetized ferrite material. The structure under study is made from a ferrite thin-film deposited on a alumina substrate. A non symmetrical coplanar line is put on the ferrite film and the absorber is made from either a graphite film or a Tantalum Nitride film or a copper slab. In order to work in millimeter wave range the barium ferrite was selected. Moreover, the size of the component could be less than the circulator one. The small size and simple shape are the principal advantages of a coplanar isolator structure.

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“…All coplanar line elements are simulated with the model according to [2]. For HBT description the in-house model [3] extended by two 1/f-noise sources is employed.…”

Section: Circuit Simulation and Mmic Fabricationmentioning

confidence: 99%

“…Furthermore, the large-signal HBT model as well as the CPW model is varied applying the built-in models and the user-defined CPW [2] and HBT model [3], respectively. Tab.…”

Section: Phase-noise Simulation and Measurementsmentioning

confidence: 99%

Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators

Lenk

Schott

Heinrich

2001

2001 31st European Microwave Conference

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 Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed. I. MotivationLow phase-noise oscillators are key components in communication as well as sensor systems for the emerging markets in the 20 GHz to 80 GHz range. In order to meet the low-cost requirements, monolithically integrated solutions (MMICs) with on-chip resonators are highly favorable. This demands for both transistors with low 1/f-noise and accurate CAD tools for circuit optimization. Regarding the transistor, the GaInP/GaAs HBT is particularly suited since its 1/fnoise is considerably lower than for GaAs HEMTs, but the frequency potential is higher than that of SiGe HBTs. Phase-noise prediction, on the other hand, involves too much uncertainties so far to be a reliable basis for circuit design. Further investigations are required on this su bject.The purpose of our paper is to contribute results in this field. As an example, we study a GaAs-HBT-based 36 GHz oscillator. Attention focuses on the phase noise at 100 kHz offsetfrequency. From the measurements, it can be seen that this frequency is in the transition region between 1/f 3 and 1/f 2 phase-noise behavior. Phase-noise modeling, therefore, needs to be composed of the following issues [6]:• Modeling and parameter extraction of the 1/f-noise of the active element used in the circuit.Measuring 1/f-noise of the GaInP/GaAs-HBTs at different source impedances and bias states, we found two independent low-frequency (LF) noise sources. The two noise sources are implemented in an in-house HBT large-signal model. The results are compared to simulations with a standard Gummel-Poon model, which includes only a single LF noise source.• Calculation of the conversion from LF noise into oscillator phase-noise. The simulations of the 36 GHz oscillator are performed using 3 different commercial design tools (MDS and ADS of Agilent and Serenade of ANSOFT). II. 1/f-Noise HBT DescriptionIn standard HBT models (e.g. Gummel-Poon) only the base current includes 1/f-noise. However, measurements of the spectral current density of 1/f-noise at the output of GaInP/GaAsHBTs with different source resistances R s show that this description is not sufficient. In the lowfrequency range, all of the extrinsic reactive elements can be neglected. Hence, the equivalent circuit of the HBT simplifies to a Y matrix with R be , and β and an additional Z matrix containing the parasitic resistors R b , R c , and R e (see Fig. 1) The 1/f-noise model should be consistent with the high-frequency noise model, so we suppose voltage sources at the extrinsic resistors and current sources a...

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Quasi-TEM description of MMIC coplanar lines including conductor-loss effects

Abstract: Design and development of a photonic bandgap (PBG)-

Cited by 292 publications

References 14 publications

Development of an Equivalent Circuit Model of a Finite Ground Coplanar Waveguide Interconnect in Mis System for Ultra-Broadband Monolithic Ics

Development of an Equivalent Circuit Model of a Finite Ground Coplanar Waveguide Interconnect in Mis System for Ultra-Broadband Monolithic Ics

Simulation Results on a New Non Symmetrical Coplanar Isolator Structure Using Magnetic Thin Film

Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators

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