“…The e-beam resist mask usually has low selectivity to LN, so thick resist is normally required, however, this will greatly limit fabrication resolution and pattern density. Alternatively, multilayer masking schemes have been developed, such as stacking multiple e-beam resist layers or adding hard mask layers [e.g., nickel [31,32] , chromium (Cr) [33,34] , silicon [35,36] , or SiO 2 [37,38] ]. Although these methods provide the required selectivity, the multiple patterning, cleaning, and etching steps greatly increase the complexity of the process.…”