Quasi-coherent thermal emitter based on refractory plasmonic materials

Liu, Jingjing; Guler, Urcan; Lagutchev, Alexei; Kildishev, Alexander V.; Malis, Oana; Boltasseva, Alexandra; Shalaev, Vladimir M.

doi:10.1364/ome.5.002721

Cited by 72 publications

(52 citation statements)

References 24 publications

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“…Overall, the TiN TPP structure is superior to the TiN MIM structure in term of Q ‐factor. In addition, the proposed TiN TPP structure can achieve a higher Q ‐factor than most of the emitters using refractory materials reported so far10,21,54,55 (see Table S1 in the Supporting Information). This is due to the fact that the electromagnetic field penetration to the refractory materials is less in TPP compared to other structures.…”

Section: Thermal Emission Measurements From Tin Mim and Tin Tppmentioning

confidence: 91%

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Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Yang

Ishii

Doan

et al. 2020

Advanced Optical Materials

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generation, [4][5][6] radiative cooling, [7] and thermophotovoltaics (TPVs). [8] When selective thermal emitters are intended to emit in shorter mid IR range (e.g., an emitter for TPV system), the emitter has to be heated above one thousand kelvin. [9] Refractory metals such as molybdenum (Mo) [10] and tungsten (W) [11] are required in such cases. However, searching for alternative plasmonic materials is essential for reducing the material cost as well as for material research interest.Transition metal nitrides such as titanium nitride (TiN) and zirconium nitride (ZrN) also possess melting point as high as ≈3000 °C, [12][13][14] hence regarded as good candidate materials for thermal emitters. In addition, transition metal nitrides are regarded as alternative plasmonic materials in the visible to infrared region due to their high carrier concentrations up to 10 21 -10 22 cm −3 . [15] Among transition metal nitrides, TiN receives many attentions as an alternative plasmonic material in the past decades. [16][17][18] One of the advantages of using TiN is that it can be used in much higher temperature than other plasmonic materials. [19][20][21] However, there are only limited studies on thermal emitters using TiN so far.To demonstrate wavelength selective thermal emission, nanostructures have been investigated intensively [22,23] rather than microcavity structures which have been studied in 1990's and early 2000's. [24][25][26] Variety of nanostructures have been proposed, such as 1D grating, [27,28] 2D or 3D metallic photonic crystals, [2,29,30] and metal-insulator-metal (MIM) metamaterial structures. [31] Among those nanostructures, MIM metamaterial structures are easy to achieve wavelength selective emissions with single or multibands whose bandwidths and emission wavelengths are adjustable. [32] However, the requirement of nanofabrication, such as e-beam lithography, leads to limitations in large area fabrications.In contrast, thin-film based devices are the candidates for large area samples which do not require nanopatterning. [33,34] One way to optimize 1D thin film structures is via manipulating the phase-shifting layers in Gires-Tournois resonator. [35] Several different multilayer thin-film designs have been explored, which include Fabry-Perot cavity with either distributed Bragg reflectors (DBRs) and/or metallic mirror(s) and Tamm plasmon polaritons (TPPs) structures. For MIM structures (i.e., Fabry-Perot cavity), standing waves exist within the dielectric layer to form a cavity resonator. [36][37][38] In contrast, 1D TPP structure can excite TPP resonance at the interface of a A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP stru...

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Section: Thermal Emission Measurements From Tin Mim and Tin Tppmentioning

confidence: 91%

“…Among transition metal nitrides, TiN receives many attentions as an alternative plasmonic material in the past decades 16–18. One of the advantages of using TiN is that it can be used in much higher temperature than other plasmonic materials 19–21. However, there are only limited studies on thermal emitters using TiN so far.…”

Section: Introductionmentioning

confidence: 99%

Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Yang

Ishii

Doan

et al. 2020

Advanced Optical Materials

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“…Other work has used a gold grating on a 1D dielectric PhC , gallium phosphide , steel (Fig. ) , titanium nitride , metalized plastic , and GaAs‐based multiple quantum wells . These structures also utilize surface plasmon‐polari ton and cavity resonances to emit, though the response is more heavily polarization dependent .…”

Section: Tunable Spectrum Emittersmentioning

confidence: 99%

Selective emitters for thermophotovoltaic applications

Pfiester¹,

Vandervelde

2016

Physica Status Solidi (a)

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Applying thermophotovoltaic (TPV) technologies to existing energy generators allows us to increase energy output while utilizing present infrastructure by reclaiming the heat lost during the production process. In order to maximize the efficiency of these sources, the conversion efficiency of the TPV system needs to be optimized. Selective emitters are often used to tailor the spectrum of incident light on the diode, blocking any undesirable light that may lead to device heating or recombination. Over the years, many different technologies have been researched to create an ideal selective emitter. Plasmas and rare‐earth emitters provided highly selective spectra early on, but their fixed peaks required tailoring the diode's band gap to the emitter's characteristic wavelength. Recent advances in engineerable materials, such as photonic crystals and metamaterials, allow the opposite to take place; an appropriate selective emitter can be designed to match the TPV diode, allowing the diode structure to be optimized independently from the emitter.

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“…3(d)]. For aGST without annealing, the emittance peak at 4.143 μm has a Q-factor of 172, which is higher than other thermal emitters reported [12,18,[30][31][32][33][34][35]. In addition, for annealing times of 2, 6, 8, 10, 12, and 14 mins, the emittance peaks that are closest to aGST's peak locate at 4.144, 4.167, 4.099, 4.118, 4.123, and 4.128 μm, respectively (2 and 12 mins curves are not shown in the figure for clarity).…”

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confidence: 92%

Tunable narrowband mid-infrared thermal emitter with a bilayer cavity enhanced Tamm plasmon

Zhu

Luo

et al. 2018

Opt. Lett.

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A narrowband thermal emitter exhibits higher energy efficiency and sensitivity in molecule sensing and other mid-infrared (MIR) spectral range applications compared to a blackbody emitter. Most narrowband thermal emitters involving surface plasmons have a relatively low quality factor (Q-factor) and require complex fabrication processes. Here we propose a bilayer cavity-enhanced Tamm plasmon (TP) structure with a high/low refractive index bilayer sandwiched between a metal and distributed Bragg reflector (DBR) to achieve an enhanced Q-factor and maintain higher emittance over a conventional pure DBR-metal TP structure-based emitters. The large optical thickness of the high/low index bilayer cavity aids in increasing the Q-factor (∼172 for emission) of the cavity resonance. Furthermore, a tunable Q-factor is achieved (Q from 172 to 47 for emission) by incorporating phase-changing material Ge 2 Sb 2 Te 5. This easy-to-fabricate and tunable high Q-factor emitter is competent as a narrowband MIR light source in molecule sensing, typically gas sensing applications.

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Quasi-coherent thermal emitter based on refractory plasmonic materials

Cited by 72 publications

References 24 publications

Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Selective emitters for thermophotovoltaic applications

Tunable narrowband mid-infrared thermal emitter with a bilayer cavity enhanced Tamm plasmon

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