Quasi-Coaxial Vertical via Transitions for 3-D Packages Using Anodized Aluminum Substrates

Kim, Kyoung-Min; Chun, Joohwan; Kwon, Young–Se

doi:10.1109/lmwc.2009.2020016

Cited by 9 publications

(4 citation statements)

References 8 publications

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“…The measured results of the micro-coaxial probes are shown in the figure above. When measuring the reflection coefficient, most of the probes seem to demonstrate good results compared to simulations with more than −10 dB loss difference at high frequencies from approximately 15 to 57 GHz, increasing the operating frequency range achieved in previous work for packaging applications by approximately 30 GHz [21,32,33]. At lower frequencies (dc-to-10 GHz) however, majority of the signal received from port 1 was reflected back and passed the −10 dB mark, which reveals a device short and/or poor signal transmission.…”

Section: Measured Resultsmentioning

confidence: 83%

Development of a through wafer 3D vertical micro-coaxial probe

Boone

Krishnan

Bhansali

2013

J. Micromech. Microeng.

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A through wafer 3D vertical micro-coaxial probe flushed in a silicon substrate has been designed and fabricated. As a result of using silicon as a dielectric, the probe's compatibility with commercial applications has significantly increased. The probe has been designed using radio frequency (RF) calculations and consists of 100 µm inner diameter and 300 µm outer diameter vias, which corresponds to a 1:3 inner/outer conductor ratio. Fabrication results indicate that the probe through holes can be formed using standard photolithography techniques and Bosch's process for deep reactive ion etching. The probe vias were successfully metalized with a diluted silver paste using a novel filling method. Measured results demonstrate that the probe has good signal transmission with a reflection coefficient less than −10 dB from 15 to 57 GHz. By developing an RF based three-dimensional micro-coaxial probe, its use as vertical interconnects in high frequency system-in-package technologies have considerably improved.

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Section: Measured Resultsmentioning

confidence: 83%

Development of a through wafer 3D vertical micro-coaxial probe

Boone

Krishnan

Bhansali

2013

J. Micromech. Microeng.

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“…With the development of 3D antenna in package, the fabrication of micrometer-level coaxial transition in a vertical direction brings in difficulties. Yeo et al (2009) designed and fabricated a quasi-coaxial transition with a Cu pillar as a signal line, aluminum as a ground wall and anodized aluminum as a dielectric material. The obtained quasi-coaxial transition presented an inner radius of 150 mm and a length of 200 mm, showing a bandwidth of 0.1-10 GHz with S 11 < -12.4 dB and S 21 > -0.75 dB.…”

Section: Introductionmentioning

confidence: 99%

A 3D coaxial transition with continuous ground wall fabricated by a 12-inch wafer-level packaging method for radio frequency applications

Zhao,

Pang,

Wang

et al. 2023

SSMT

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Purpose This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss. Design/methodology/approach An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius R of coaxial transition is optimized by designing and fabricating three samples. Findings The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius R of 155 µm exhibits S11 < –10 dB and S21 > –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth. Originality/value The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.

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“…Due to its tunable porosity, its electrical insulation and its chemical resistance, PAA has been used in many applications such as; dyeing of aluminum layers [1], humidity sensors [8], microcantilevers [9], antireflection structures [10], photonics crystals [11], insulating layers for electronic devices [12,13] and hermetic packaging for microsystems [13][14][15]. Moreover, due to its capillaries, high aspect ratio structures of alumina were fabricated [9,16,17] and due to its nanometer-range porosity, PAA was employed, as a template or as a mask for the fabrication of nanostructured materials [18], nanotubes [19,20], nanowires [21,22], nanoholes [23] and nanodots [24].…”

Section: Introductionmentioning

confidence: 99%