Quasi-bipolar channel modulation instability analysis for P-GaN gate High Electron Mobility Transistor

Tang, Cen; Li, Xueyang; Hou, Mingchen; Xie, Gang; Sheng, Kuang

doi:10.1109/ispsd.2016.7520793

Cited by 2 publications

(1 citation statement)

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“…11) 2) The positive charge at MOS interface and in gateinsulator can be controlled by low-damage dry recess etching or wet recess etching and removing damaged layer. [12][13][14][15][16][17][18][19][20] Post-deposition annealing. 21,22) Negative ion introduction by F plasma treatment and F ion implantation.…”

Section: Introductionmentioning

confidence: 99%

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al _x Ga_1−xN back barrier

Miyamoto

Okamoto

Nakayama

et al. 2020

Jpn. J. Appl. Phys.

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Threshold voltage (Vth) control of a GaN MOS transistor by AlxGa1−xN back barrier was systematically studied. Non-recessed GaN MOS HEMTs and recessed GaN MOS FETs with an AlxGa1−xN (x = 0%, 3%, 5%, 8%) back barrier layer were fabricated on the same 6 inch GaN-on-Si wafers and characterized. Al2O3 gate-insulator thickness was changed from 20 to 100 nm to evaluate the Al2O3/GaN interface fixed charge. The Vth of the GaN MOS transistor increases with increasing in Al content x of the AlxGa1−xN back barrier layer and decreasing in Al2O3 thickness. The dependences of Vth on Al content x and Al2O3 thickness were different between non-recessed and recessed transistor. The different dependences of Vth on Al content x and Al2O3 thickness were explained well by the newly introduced surface donor model, which compensate not only the surface polarization charge but also the surface electric field.

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Section: Introductionmentioning

confidence: 99%

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al _x Ga_1−xN back barrier

Miyamoto

Okamoto

Nakayama

et al. 2020

Jpn. J. Appl. Phys.

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Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress

Wang

Chen

Sun

et al. 2022

IEEE Trans. Electron Devices

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Quasi-bipolar channel modulation instability analysis for P-GaN gate High Electron Mobility Transistor

Cited by 2 publications

References 5 publications

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al _x Ga_1−xN back barrier

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al _x Ga_1−xN back barrier

Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress

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Quasi-bipolar channel modulation instability analysis for P-GaN gate High Electron Mobility Transistor

Cited by 2 publications

References 5 publications

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga1−x N back barrier

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al x Ga1−x N back barrier

Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress

Contact Info

Product

Resources

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Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al _x Ga_1−xN back barrier

Threshold voltage control of non-recessed GaN MOS HEMTs and recessed GaN MOS FETs by Al _x Ga_1−xN back barrier