Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress

Wang, Xiaoming; Chen, Wanjun; Sun, Ruize; Liu, Chao; Xia, Yun; Xin, Yajie; Xu, Xiaorui; Wang, Fangzhou; Chen, Xinghuan; Chen, Yiqiang; Zhang, Chao

doi:10.1109/ted.2022.3200928

Cited by 4 publications

(1 citation statement)

References 36 publications

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“…Currently, p-gate AlGaN/GaN HEMTs are a highly attractive solution and widely employed in commercial applications [1,3]. Typically, the p-GaN layer positioned on top of the AlGaN barrier elevates the band diagram, resulting in the depletion of the twodimensional electron gas (2DEG) in the AlGaN/GaN heterostructure (under the gate) at zero gate bias, thus enabling normal-off operation [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

He,

Jiang

et al. 2024

J. Phys. D: Appl. Phys.

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In this work, we investigate the degradation behavior and mechanism of p-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) for the first time under hydrogen (H2) atmosphere. The experimental results reveal significant decrease in drain-to-source current, negative drift in threshold voltage, increase in off-state gate leakage current, and deterioration of subthreshold swing in the p-gate AlGaN/GaN HEMT after H2 treatment. The degradation of the electrical parameters is considered to hydrogen poisoning phenomenon. Through secondary ion mass spectrometry and variable temperature photoluminescence spectroscopy, we observe the increase in hydrogen concentration in the p-GaN layer and the formation of electrically inactive Mg-H complexes after H2 treatment. As results, the effective hole concentration decreases and the trap density of the device increases, which are confirmed by Hall effect measurement and low-frequency noise analysis, respectively. The detrimental effect of hydrogen on p-gate AlGaN/GaN HEMTs can be attributed primarily to the compensation of Mg doping and the generation of defects.

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