Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors

Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors

“…The use of strain to reduce hole effective masses by splitting the heavy-hole (HH) and light-hole (LH) valence bands was proposed and demonstrated in p-channel InGaAs/(Al)GaAs quantum wells [4][5][6][7]. More recently, the technique has been applied to strained Ge layers on lattice-relaxed SiGe buffer layers, with room-temperature mobilities greater than 3000 cm 2 /V s [8,9].…”

“…For these applications, a key to low-power operation is the ability to make complementary circuits. In III-V materials, one challenge centers on maximizing the hole mobility in p-channel FETs [4].…”

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

“…The quantum well strain and sheet carrier density vary considerably amongst the samples. Data are from the following references: InGaAs [22][23][24][25][26][27], InGaAs/InGaP [28], GaSb [8,12,29], InGaSb [13,30], and InSb [16,31]. similar hole densities [12].)…”

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

“…6,[9][10][11][12][13] Only one more recent paper described an InGaAs alloy and an InGaP barrier with a hole mobility as high as 875 cm 2 /Vs. 8 For further progress, the recent n-channel work and information in Table I suggest moving further to the right in Figure 1 and using GaSb, InSb, or their alloys (In x Ga 1−x Sb).…”

“…Note that the quantum well strain and sheet carrier density vary considerably among the samples. Data are from the following references: InGaAs,6,[8][9][10][11][12][13] GaSb,[14][15][16] InGaSb,17,23 and InSb 19. Energy gap versus lattice constant for selected semiconductors.…”