Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

Martı́nez, Antonio; Aldegunde, Manuel; Seoane, Natalia; Brown, Andrew R.; Barker, John R.; Asenov, A.

doi:10.1109/ted.2011.2157929

Cited by 73 publications

(59 citation statements)

References 27 publications

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“…The nanowire with continuous doping (labelled as "smooth" in the figure) is shown for comparison. Similarly to previously published results, [35]- [37], presence of the random dopants in the access regions leads to fluctuation of the threshold voltage and the OFF-and ON-current. Importantly, the existence of random dopants also results in a significant reduction of the average ON-current if compared to the smooth transistor.…”

Section: A Impact Of the Precise Dopant Placement On Performancesupporting

confidence: 85%

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Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study

Georgiev

Towie

Asenov

2013

IEEE Trans. Electron Devices

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n Georgiev, V.P., Towie, E.A., and Asenov, A. (2013) Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: a full threedimensional NEGF simulation study. IEEE Transactions on Electron Devices, 60(3), pp. 965-971.There may be differences between this version and the published version. You are advised to consult the publisher's version if you wish to cite from it.http://eprints.gla.ac.uk/82165/ Deposited on: 16 February 2016 Enlighten -Research publications by members of the University of Glasgow http://eprints.gla.ac.uk > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1Abstract-In this paper, we report the first systematic study of quantum transport simulation of the impact of precisely positioned dopants on the performance of ultimately scaled gateall-around silicon nanowire transistors (SNWT) designed for digital circuit applications. Due to strong inhomogeneity of the self-consistent electrostatic potential, a full 3-D real-space NonEquilibrium Green's Function (NEGF) formalism is used. The simulations are carried out for an n-channel NWT with 2.2 x 2.2 nm 2 cross-section and 6 nm channel length, where the locations of the precisely arranged dopants in the source drain extensions and in the channel region have been varied. The individual dopants act as localized scatters and, hence, impact of the electron transport is directly correlated to the position of the single dopants. As a result, a large variation in the ON-current and modest variation of the subthreshold slope are observed in the I D -V G characteristics when comparing devices with microscopically different discrete dopant configuration. The variations of the current-voltage characteristics are analyzed with reference to the behaviour of the transmission coefficients.Index Terms-single-atom transistor, discrete dopants, nanowire transistor, non-equilibrium Green's function (NEGF), 3-D simulations, quantum transport. I. INTRODUCTIONILICON TECHNOLOGY can deliver sub-10 nm devices where 'every atom counts'. Manipulation of atoms with high precision on such a scale, in principle, can lead to technological innovations, such as transistors with extremely short gate length [1], quantum computing components [2] and optoelectronic devices [3]. One possible strategy to create this next generation of devices is to precisely place individual discrete dopants (such as phosphorous atoms) in a nanoscale transistor [4]. The number and the spatial distribution of individual dopants within the transistor of modern silicon chips determine both their characteristics and their unwanted variability [5], [6]. Hence, it is crucial to establish a direct link between the position of individual dopants and the transistors' performance [7], [8]. At the physical limit of transistor scaling a single phosphorous atom embedded within epitaxial silicon environment, in principle, can be used to build a single-atom transistor [9]. Although such an idea looks spectacularly attractive, the side ga...

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Section: A Impact Of the Precise Dopant Placement On Performancesupporting

confidence: 85%

“…For a doping concentration of 10 20 cm -3 , there are only 2 dopants on average in the volume of 4 x 2.2 x 2.2 nm 3 . All simulations were carried out at drain voltage (V D ) equal to 0.05 V in order to investigate the charge density around the impurities more easily and to provide consistent comparison with previously published results [35], [36], [37]. …”

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confidence: 99%

Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study

Georgiev

Towie

Asenov

2013

IEEE Trans. Electron Devices

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“…All simulations are carried out by a means of the DD module (including density-gradient quantum corrections) and the mode space NEGF approach module of the GSS atomistic simulator GARAND [8,9]. For the purpose of this work, we assume ballistic transport without scattering and absence of statistical variability.…”

Section: Methodsmentioning

confidence: 99%

“…The doping concentration in the source/drain region is 1e20 [cm -3 ] and in the channel it is 1e14 [cm -3 ]. We consider only four of the six lowest valleys of the Si conduction band [9]. The effective masses correspond to their bulk values for <100> crystal orientation in Si: m l =0.916*m 0 and m t =0.19*m 0 .…”

Section: Methodsmentioning

confidence: 99%

Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs

Georgiev

Amoroso

Gerrer

et al. 2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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“…As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its down scaling limits, many novel transistors' structures are being extensively explored. Among them, the silicon nanowire transistor (SiNWT) has attracted broad attention from both the semiconductor industry and academic fields [1][2][3][4]. 1 shows the most commonly used SRAM bit-cell architecture that is the six MOSFET transistors (6-T) SRAM cell.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell

Hashim

Alsibai

Manap

2015

MATEC Web of Conferences

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Abstract. This paper represents the impact of nanowires ratio of silicon nanowire transistors on the characteristics of 6-transistors SRAM cell. This study is the first to demonstrate nanowires ratio optimization of Nano-scale SiNWT Based SRAM Cell. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on both nanowires ratio and digital voltage level (V dd). And increasing of logic voltage level from 1V to 3V tends to decreasing in optimization ratio but with increasing in current and power. SRAM using nanowires transistors must use logic level (2V or 2.5V) to produce SRAM with lower dimensions and lower inflection currents and then with lower power consumption.

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Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

Cited by 73 publications

References 27 publications

Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study

Impact of Precisely Positioned Dopants on the Performance of an Ultimate Silicon Nanowire Transistor: A Full Three-Dimensional NEGF Simulation Study

Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs

Optimization of Nanowires Ratio in Nano-scale SiNWT Based SRAM Cell

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