Quantum tailoring of optical transitions in InxGa1−xAs/AlAs strained quantum wells

Abstract

Strain effects, electronic parameters, and electronic structures in modulation-doped In x Ga 1−x As/In y Al 1−y As coupled step-rectangular quantum wells J. Appl. Phys. 94, 7621 (2003); 10.1063/1.1631078 1.26 μm intersubband transitions in In 0.3 Ga 0.7 As/AlAs quantum wells

Calculation of Electronic States in Semiconductor Heterostructures with an Empirical spds* Tight-Binding Model

“…As was shown recently in more detail, the TB calculations are in quantitative agreement with observed transition energies: For a 5ML type-II sample with 307 indium content, both experiment and TB theory gave a pseudo-direct hh1±c1 gap energy of 1730 meV, and for a 8 ML type-I sample, the direct hh1±c1 transition was observed at 1635 meV and calculated to be 1640 meV, the difference corresponding roughly to excitonic corrections neglected in the calculation [33]. For the latter 8 ML sample, a room temperature intersubband transition c1±c2 occurred at 675 meV, a value reproduced again with the TB calculation (680 meV) [33].…”

“…For the latter 8 ML sample, a room temperature intersubband transition c1±c2 occurred at 675 meV, a value reproduced again with the TB calculation (680 meV) [33].…”

Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP

“…In these systems, the lowest conduction band state derives mainly from the bulk InGaAs valley and strong ISB absorption was observed, corresponding to the broad range of available -like ISB transitions within the QW Brillouin zone. However, quantum-size effects in the InGaAs layers, associated with well thickness and indium mole fraction, can push the lowest conduction-band state near or above the X conduction-band extremum localized in the AlAs barrier layers [8]. This leads to carrier transfer from the subband to the X subbands [9].…”

Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

“…Experimental features at 1.520 eV and 1.9 eV correspond respectively to GaAs substrate and Al0.3Ga0.7As barrier erate on a three-level model to realize population inversions between the first and second excited states. Our TB model was demonstrated to give an accurate modeling of intersubband properties (dipole moment and energy) in strained quantum wells 27,28 . After corroborating our results for AlAs and InAs MLs insertion by comparison to experimental results of interband transitions in the previous section and in Ref.…”