Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP

Calculation of Electronic States in Semiconductor Heterostructures with an Empirical spds* Tight-Binding Model

“…5. Band alignment of a In 0X52 Al 0X48 As/AlAs/In 0X4 Ga 0X6 As/AlAs/In 0X52 Al 0X48 As heterostructure grown pseudomorphically on InP [35]. The calculated G electron confinement barrier is 1.33 eV in the In 0X4 Ga 0X6 As layers whereas the X electrons are confined in the AlAs layers.…”

“…6a and a high intersubband transition strength must be found, and a barrier thickness of 7 ML appears to be sufficient for a saturation of the transition strength in Fig. 6b [35]. It should be noted that this system provides strong optical activity in the transparency window of optical fibres, l 1X55 AE 0X02 mm, and R. Scholz et al Fig.…”