Quantum Size Effects in Epitaxial ErAs on GaAs(001)

Ilver, L.; Kanski, J.; Wigren, C.; Karlsson, Ulf O.; Varekamp, P. R.

doi:10.1103/physrevlett.77.4946

Cited by 5 publications

(8 citation statements)

References 11 publications

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“…8 ͑along ⌫ to X͒ are taken with p-polarized light that should suppress the ⌬ 5 band. In the previous study of the experimental band structure of ErAs͑100͒, 24 the unexpectedly small surface band dispersion and the absence of bulk band dispersion ͑no dispersion with changing photon energy͒ were attributed to the two-dimensional character of an epitaxial ErAs͑100͒ surface grown on GaAs͑100͒. Our films are similar in thickness to those discussed in that previous work, yet we have observed bulk band dispersion.…”

Section: Band Structuresupporting

confidence: 73%

“…[19][20][21] Unfortunately, there is very little experimental data on the band structure of the rare-earth pnictides. Of the photoemission and inverse photoemission undertaken on this class of materials, [22][23][24][25] there are very few experimental band mappings. 24,25 In the previous experimental band structure studies of ErAs͑100͒ ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Of the photoemission and inverse photoemission undertaken on this class of materials, [22][23][24][25] there are very few experimental band mappings. 24,25 In the previous experimental band structure studies of ErAs͑100͒ ͑Ref. 24͒ some comparison with theory is possible, but much of the bulk band structure was not explored.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of ErAs(100)

et al. 2003

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The experimental band structure of the rare-earth pnictide erbium arsenide ͑ErAs͒, grown epitaxially on GaAs͑100͒, has been mapped out using photoelectron spectroscopy and inverse photoemission spectroscopy. The electronic structure is dominated by bulk bands qualitatively consistent with the calculated band structure. A number of additional nondispersing 4 f multiplet levels can be identified in the valence-band structure as well as at least one surface resonance band. From symmetry selection rules, photoemission provides strong evidence that the ⌬ 5 ͑or e͒ symmetry bands are a consequence of hybridization between Er and As, while the ⌬ 1 ͑or a 1 ) symmetry bands have possible contributions from nonbonding or antibonding states from Er ͑and/or As͒.

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Section: Band Structuresupporting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

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Electronic structure of ErAs(100)

et al. 2003

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“…[8][9][10][11][12] and references therein) as well as of metal and semiconductor nanoparticles [13,14]. We are not aware of any publications on quantum-size effects in two-dimensional semiconductor heterostructures with this technique.…”

mentioning

confidence: 96%

“…We are not aware of any publications on quantum-size effects in two-dimensional semiconductor heterostructures with this technique. Observed quantum size effects are generally discussed in terms of discrete wave vectors selected from the bulk band structure [7][8][9][10][11][12]15]. This requires film thicknesses of several monolayers.…”

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confidence: 99%

Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States

et al. 1998

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Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on highly oriented pyrolytic graphite by van der Waals epitaxy and probed by energy dependent angle resolved photoelectron spectroscopy. The layers show a transition from two-dimensional bands with atomiclike states to molecularlike states localized along the c direction normal to the surface. The extended band structure showing band dispersion was observed for thicker films.[ S0031-9007(97) In contrast to the common elemental (Si, Ge) or compound semiconductors (e.g., GaAs) with diamond, zinc blende, or related structures the layered metal chalcogenides like MoS 2 or InSe exhibit strong anisotropic chemical bonding and can be considered as quasi-twodimensional materials. They are characterized by covalently bound X-M-X or X-M-M-X (M metal; X chalcogen) sandwich layers with only weak van der Waals interactions along the crystal c axis, perpendicular to the layers [1]. The absence of directional chemical bonds at interfaces formed with the van der Waals planes allows heteroepitaxial growth despite lattice mismatches as high as 20% [2]. In addition, the absence of dangling bonds at the van der Waals planes results in a rather strong anisotropy of the surface tension of these materials which favors growth of two-dimensional layers rather than of three-dimensional islands.We have investigated the thickness dependence of the electronic structure of thin films of the semiconductor InSe grown on semimetallic highly oriented pyrolytic graphite (HOPG). Both materials belong to the nonsymmorphic space group D 4 6h [3,4]. The crystallographic structure of InSe is shown in Fig. 1(a). Film growth proceeds along the c direction which corresponds to the D symmetry line of the hexagonal Brillouin zone [ Fig. 1(b)]. The electronic band structure along this direction as adopted from band structure calculations of Doni et al. [5] for InSe and of Tatar and Rabii [3] for graphite are shown in Fig. 1(d) together with their symmetry notations. Four well separated groups of valence bands [labeled A D in Fig. 1(d)] are present for InSe. They are derived from Se 4p z ͑A͒, Se 4p xy ͑B͒, antibonding ͑C͒, and bonding ͑D͒ In 5s orbitals, respectively [4,5]. For graphite the bands A and B belong to s 1,2 and to p states, respectively [3,6]. The uppermost valence bands of InSe (group A) are formed by D 1 and D 2 bands which have no correspondence in the graphite band structure at comparable binding energies. This implies that these states can form no strong chemical bonds with the substrates or, in other words, are electronically decoupled. Considering the films as a quantum well structure embedded between graphite and vacuum we are dealing with large confinement potentials on either side in contrast to common semiconductor quantum well structures with confinement potentials of about 1 eV or less [7]. It should therefore, in principle, be possible to study the electronic properties of semiconductor quantum films and to follow the evolution of band st...

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Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs

et al. 2011

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The atomic and electronic structures of ErAs nanoparticles embedded within a GaAs matrix are examined via cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/XSTS). The local density of states (LDOS) exhibits a finite minimum at the Fermi level demonstrating that the nanoparticles remain semimetallic despite the predictions of previous models of quantum confinement in ErAs. We also use XSTS to measure changes in the LDOS across the ErAs/GaAs interface and propose that the interface atomic structure results in electronic states that prevent the opening of a band gap.

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Quantum Size Effects in Epitaxial ErAs on GaAs(001)

Cited by 5 publications

References 11 publications

Electronic structure of ErAs(100)

Electronic structure of ErAs(100)

Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States

Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs

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