Quantum size effect and perspectives of its practical application

Elinson, M. I.; Volkov, V. A.; Lutskij, V.N.; Pinsker, T. N.

doi:10.1016/0040-6090(72)90102-2

Cited by 53 publications

(12 citation statements)

References 9 publications

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“…The quantum size effect ͑QSE͒ becomes important when the size of a device is comparable with the de Broglie wavelength of charge carriers. 1 Properties of a system such as thermal stability, 2 superconductivity, 3 and surface reactivity 4 alter markedly as the size of the system increases from that of one atom. Manipulating that size with atomic precision becomes a critical issue in tuning the properties of nanoscale devices.…”

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confidence: 99%

Atomic-layer-resolved bound states in quantum wells analyzed using a pseudopotential approach

et al. 2008

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We observed atomic-layer-resolved surface states and quantum-well states using angle-resolved photoelectron spectroscopy on atomically flat Ag/Au͑111͒ thin films grown with a two-step method. The layer dependence of binding energies of the bound states was determined unequivocally for a Ag coverage up to 17 monolayers. We analyzed both the surface states and the quantum-well states using a one-dimensional pseudopotential approach. Our results show a fruitful combination of growth techniques and theoretical analysis for thin-film systems.

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confidence: 99%

Atomic-layer-resolved bound states in quantum wells analyzed using a pseudopotential approach

et al. 2008

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“…and (from the minimum condition for E~ in (7) and (8) iii where y is a variational parameter, and C, is a normalizing constant. From the normalizing condition for xl(z) and from (5), (6), and (14) we obtain…”

Section: Image Forces and Low-energy Electronic States In Thin Solid mentioning

confidence: 99%

“…We will assume that the form of the film in the plane Oxy is rectangular with dimensions L, and L, along the axes x and y, respectively, and 2a < L,, L,, the film volume V being V = 2aLlL,. Then, setting and substituting it in (2) and (3), we obt,ain for (6) h2…”

Section: Image Forces and Low-energy Electronic States In Thin Solid mentioning

confidence: 99%

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On the Surface Electrical Resistivity of Thin Semiconducting and Semimetallic Films

Dimitrov

1978

Physica Status Solidi (b)

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I n the effective-mass approximation, taking into account the image forces, the low-energy electronic states in thin crystalline films, the transport relaxation time of current carriers, and electrical resistivity of the films are calculated when the scattering mechanism is connected with the randomly distributed on their boundary surfaces screened Coulomb and electric dipole impurity centres. It is shown that in some cases of thin solid film materials the image forces influence essentially the electronic states and their surface electrical resistivity.I n der Niiherung der effektiven Masse und unter Berticksichtigung dcr Wirkung der Abbildungskriiifte werden fiir eine diinne ICristallplatte die Elektronenzustiinde niedriger Energie sowie die Transport-Relaxationszeit der Ladimgstrager und der elektrische Widerstand berechnet, wobei der Streumechanismus mit statistisch auf der Plattenoberfliiche verteilten abgeschirmten Coulombund elektrischen Dipolzentren verbunden ist. Es wird gezeigt, da6 in manchen Fallen die Bildkrafte wesentlich die Elektronenzustande und den Oberflachenwiderstand dunner Schichten beeinflussen.

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“…3,4 The remarkable effect is that the electrons confined in thin films lead to QW state (QWS). 5,6 The electrons confined by the finite barrier involve multiple reflections between two film boundaries. When the thickness of potential barrier is comparable with the de Broglie wavelength of the electrons, it leads to quantized energy level and the standing wave of electronic states takes place.…”

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confidence: 99%

Surface confined quantum well state in MoS2(0001) thin film

Song

Meng

et al. 2015

Applied Physics Letters

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Surface confined quantum well state (scQWS) is a QWS confined around the surface of a thin film whose electronic energy is smaller than the work function of the film. The scQWS is rather rare in most thin films. Here, we show the existence of scQWS in thin films of transition metal dichalcogenides, MoS 2 . Signatures of scQWS are identified as the overall downward band dispersion in the bulk gap of 2 H-MoS 2 thin film at larger binding energy range. These scQWSs are also characterized with a Shockley-type surface state having an inverse parabolic decay into the film and a symmetric (asymmetric) distribution of projected charge density at the two surfaces of odd-layer (even-layer) films. Our findings of scQWS in MoS 2 shed some light on understanding the electronic properties of 2D materials with implications in future 2D electronic devices. V C 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4934610] APPLIED PHYSICS LETTERS 107, 161602 (2015) This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 155.98.2.187On: Thu, 05 Nov 2015 21:55:41 161602-2Sun et al.

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Quantum size effect and perspectives of its practical application

Cited by 53 publications

References 9 publications

Atomic-layer-resolved bound states in quantum wells analyzed using a pseudopotential approach

Atomic-layer-resolved bound states in quantum wells analyzed using a pseudopotential approach

On the Surface Electrical Resistivity of Thin Semiconducting and Semimetallic Films

Surface confined quantum well state in MoS2(0001) thin film

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